Method for cutting object to be processed

Patent metadata

Field	Value
Publication number	US-9302410-B2
Application number	US-201013383487-A
Country	US
Kind code	B2
Filing date	Jul 21, 2010
Priority date	Jul 28, 2009
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12 ). Here, a rear face 1 b of an object to be processed 1 A and a front face 10 a of an object to be processed for separation 10 A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1 a of the object 1 A continuously without substantially changing its direction. When generating a stress in the object for separation 10 A, the fracture 17 has reached a rear face 10 b of the object for separation 10 A and thus easily extends toward the object 1 A.

First claim

The invention claimed is:

1. An object cutting method comprising the steps of:
bonding a first-side end face of a first sheet-like object to be processed comprising a silicon substrate having a main face in a (100) plane and a second-side end face of a second sheet-like object to be processed such that the second-side end face of the second object opposes the main face of the first object, at least one of the first and second objects having a layer of material patterned into a grid formed thereon through which the first and second objects are bonded, an outermost periphery of the first object being located on an outer side of an outermost cutting line for the second object, such that upon completion of the bonding step, the outermost periphery of the first object is located the outer side of the outermost cutting line for the second object;
irradiating the first object with laser light, thereby forming a molten processed region within the silicon substrate along each of a plurality of intersecting cutting lines formed in a grid for the second object, and causing a fracture generated from each molten processed region which acts as a start point to reach a second-side end face of the first object along the cutting lines, wherein no molten processed region is formed in the second object upon irradiation with the laser light, and the molten processed regions are formed only within the first object, and wherein the grid of the layer of material patterned into a grid is aligned with the grid of the plurality of cutting lines formed in a grid;
generating a stress in the first object, thereby causing the fractures to reach a first-side end face of the second object along the cutting lines through the layer of material patterned into a grid, thereby cutting of second object along the cutting lines; and
etching away the layer of material patterned into a grid, thereby removing the layer of material patterned into a grid.

2. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by anode bonding.

3. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by surface-activated direct bonding.

4. An object cutting method according to claim 1 , wherein the first object is irradiated with the laser light while using the second-side end face of the first object as a laser light entrance surface.

5. An object cutting method according to claim 1 , wherein the stress is generated in the first object by expanding an expandable holding member attached to the second-side end face of the first object.

6. An object cutting method according to claim 1 , wherein the silicon substrate has a thickness greater than that of the second object.

7. An object cutting method according to claim 1 , wherein the second object comprises a plurality of functional devices; and
wherein the cutting line passes between the functional devices located adjacent to each other.

8. An object cutting method according to claim 1 , wherein the second object comprises a glass substrate.

9. An object cutting method according to claim 1 , wherein the second object comprises an LTCC substrate.

10. An object cutting method according to claim 1 , wherein the second object comprises a sapphire substrate.

Assignees

• Shimoi Hideki
• Uchiyama Naoki
• Kawaguchi Daisuke
• Hamamatsu Photonics Kk

Inventors

• Shimoi Hideki
• Uchiyama Naoki
• Kawaguchi Daisuke

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• B28D5/00 Primary

  Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor (working by grinding or polishing B24; for artistic purposes B44B) · CPC title

• B32B38/0004

  Cutting, tearing or severing, e.g. bursting; Cutter details (cutting in general B26D; laminating combined with punching or perforating B32B38/04; removing all or part of the layers B32B38/10; cutting in combination with laying up and registration B32B38/185 takes precedence) · CPC title

• B32B37/06 Primary

  characterised by the heating method · CPC title

• Y10T156/1052

  with cutting, punching, tearing or severing · CPC title