Frequency mixer having ferromagnetic film

Patent metadata

Field	Value
Publication number	US-9300251-B2
Application number	US-4904008-A
Country	US
Kind code	B2
Filing date	Mar 14, 2008
Priority date	Mar 16, 2007
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

First claim

What is claimed is:

1. A frequency conversion device comprising:
a substrate;
a plurality of ferromagnetic film segments disposed over a surface of the substrate at different locations, each of the plurality of ferromagnetic segments comprising a different ferromagnetic material;
an insulator disposed over the plurality of ferromagnetic film segments; and
at least one microstrip antenna disposed over the insulator at a location above each of the plurality of ferromagnetic film segments.

2. The device of claim 1 , wherein at least one of the ferromagnetic film segments comprises NiFe.

3. The device of claim 1 , wherein at least one of the ferromagnetic film segments comprises CoFe.

4. The device of claim 1 , wherein at least one of the ferromagnetic film segments comprises CoTaZr.

5. The device of claim 1 , wherein the thickness of the plurality of ferromagnetic film is within the range of about 10 nm to about 500 nm.

6. The device of claim 1 , wherein the thickness of the insulator is within the range of about 10 nm to about 500 nm.

7. The device of claim 1 , further comprising circuitry configured to (a) apply an input frequency to the microstrip antennas and (b) detect a mixed output frequency from the microstrip antennas in response to an applied radiofrequency.

8. The device of claim 1 , further comprising a plurality of microstrip antennas disposed over the insulator at a location above each of the plurality of ferromagnetic film segments.

9. The device of claim 1 , wherein the at least one microstrip antenna comprises an asymmetric coplanar stripline antenna.

10. The device of claim 1 , wherein the device is configured to receive a first input frequency comprising a public radiofrequency and a second input frequency comprising a non-public LO input frequency.

11. The device of claim 10 , wherein the non-public LO input frequency is adjustable.

12. The device of claim 1 , wherein the device is configured to operate in at high frequencies in the GHz and THz range.

13. A frequency conversion device comprising:
a substrate;
a ferromagnetic film of a first type disposed over a surface of the substrate;
a ferromagnetic film of a second type disposed over the surface of the substrate;
an insulator disposed over the ferromagnetic film of the first type and of the second type;
a first microstrip antenna disposed over the insulator at a location above the ferromagnetic film of the first type; and
a second microstrip antenna disposed over the insulator at a location above the ferromagnetic film of the second type.

14. The device of claim 13 , wherein the ferromagnetic films of the first and second type are selected from the group consisting of NiFe, CoFe, and CoTaZr.

15. The device of claim 14 , wherein the thickness of the ferromagnetic films of the first and second type is within the range of about 10 nm to about 500 nm.

16. The device of claim 15 , wherein the thickness of the insulator is within the range of about 10 nm to about 500 nm.

17. The device of claim 13 , further comprising circuitry configured to (a) apply an input frequency to the first and second microstrip antennas and (b) detect a mixed output frequencies from the first and second microstrip antennas in response to an applied radiofrequency.

18. The device of claim 17 , wherein the device is configured to receive a first input frequency comprising a public radiofrequency and a second input frequency comprising a non-public LO input frequency.

19. The device of claim 18 , wherein the non-public LO input frequency is adjustable.

20. The device of claim 13 , wherein the device is configured to operate in at high frequencies in the GHz and THz range.

Assignees

• Khitun Alexander
• Roshchin Igor V
• Galatsis Kosmas
• Bao Mingqiang
• Wang Kang L
• Univ California

Inventors

• Khitun Alexander
• Roshchin Igor V
• Galatsis Kosmas
• Bao Mingqiang
• Wang Kang L

Classifications

• H03D9/00 Primary

  Demodulation or transference of modulation of modulated electromagnetic waves (demodulating light, transferring modulation in light waves G02F2/00) · CPC title