Differential crystal oscillator circuit

Patent metadata

Field	Value
Publication number	US-9300249-B2
Application number	US-201414338241-A
Country	US
Kind code	B2
Filing date	Jul 22, 2014
Priority date	Jul 22, 2014
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.

First claim

What is claimed is:

1. A differential crystal oscillator circuit, comprising:
first and second output terminals;
a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals;
first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, the first MOSFET diode including a third transistor with a gate terminal of the third transistor only connected to a drain terminal of the third transistor through a first resistor, the second MOSFET diode including fourth transistor with a gate terminal of the fourth transistor only connected to a drain terminal of the fourth transistor through a second resistor,
wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor,
wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and
a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.

2. The circuit of claim 1 , wherein the first and second MOSFET diodes are configured as first and second p-channel MOSFET (PMOS) diodes, respectively.

3. The circuit of claim 2 , further comprising
a current source coupled to source terminals of the first and second PMOS diodes, and to a supply voltage.

4. The circuit of claim 1 , wherein source terminals of the first and second MOSFET diodes are coupled to a supply voltage.

5. The circuit of claim 1 , wherein the first and second transistors are configured as n-channel MOSFET (NMOS) transistors.

6. The circuit of claim 5 , wherein source terminals of the NMOS transistors are coupled to a ground voltage.

7. The circuit of claim 1 , wherein drain terminals of the first and second MOSFET diodes are coupled to drain terminals of the first and second transistors.

8. The circuit of claim 1 , wherein the first and second MOSFET diodes are configured as first and second n-channel MOSFET (NMOS) diodes, respectively.

9. The circuit of claim 8 , wherein source terminals of the first and second NMOS diodes are coupled to source terminals of the first and second transistors and to a ground voltage.

10. The circuit of claim 9 , further comprising
first and second current sources coupled to drain terminals of the first and second NMOS diodes and drain terminals of the first and second transistors,
wherein the first and second current sources are also coupled to a supply voltage.

11. A method of generating an oscillation frequency at output terminals of a differential oscillator circuit, the method comprising:
generating the oscillation frequency using a cross-coupled pair of transistors and a reference resonator coupled between the output terminals;
producing low-impedance load at low frequencies and high-impedance load at higher frequencies using MOSFET diodes coupled to the cross-coupled pair of transistors,
wherein each of the MOSFET diodes includes a resistor connected between gate and drain terminals; and
supplying current between a supply voltage and a parallel combination of the MOSFET diodes and the cross-coupled pair of transistors.

12. The method of claim 11 , wherein supplying current comprises
supplying current through a transistor of each diode of the MOSFET diodes when a voltage at a gate terminal of the transistor exceeds a threshold voltage.

13. The method of claim 11 , further comprising
coupling the cross-coupled pair of transistors to a ground voltage.

14. An apparatus for generating an oscillation frequency at output terminals of a differential oscillator circuit, the apparatus comprising:
means for generating the oscillation frequency using a cross-coupled pair of transistors by driving a reference resonator coupled between the output terminals;
means for producing low-impedance load at low frequencies and high-impedance load at higher frequencies using MOSFET diodes coupled to the cross-coupled pair of transistors,
wherein the means for producing is coupled to the means for generating; and
means for supplying current between a supply voltage and a parallel combination of the MOSFET diodes and the cross-coupled pair of transistors.

15. The apparatus of claim 14 , wherein means for supplying current comprises
means for supplying current through a transistor of each diode of the MOSFET diodes when a voltage at a gate terminal of the transistor exceeds a threshold voltage.

16. The apparatus of claim 14 , further comprising
means for coupling the means for generating to a ground voltage.

Assignees

• Qualcomm Inc

Inventors

• Rajavi Yashar
• Kavousian Amirpouya
• Khalili Alireza
• Vahid Far Mohammad Bagher
• Komijani Abbas

Classifications

• H03B5/06 Primary

  Modifications of generator to ensure starting of oscillations · CPC title

• H03B2200/0094

  Measures to ensure starting of oscillations · CPC title

• H03B5/36

  active element in amplifier being semiconductor device ({H03B5/323, H03B5/326} , H03B5/38 take precedence) · CPC title

• H03B5/364 Primary

  the amplifier comprising field effect transistors (H03B5/366 takes precedence) · CPC title

• H03B2200/004

  including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor · CPC title