PLZT capacitor on glass substrate

Patent metadata

Field	Value
Publication number	US-9299496-B2
Application number	US-201514873532-A
Country	US
Kind code	B2
Filing date	Oct 2, 2015
Priority date	Oct 29, 2013
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

First claim

We claim:

1. A capacitor comprising:
a substrate formed of glass;
a first metallization layer deposited on a top side of the substrate to form a first electrode;
a dielectric layer formed of lead-lanthanum-zirconium-titanate (PLZT) deposited over the first metallization layer; and
a second metallization layer deposited over the dielectric layer to form a second electrode.

2. The capacitor in accordance with claim 1 , wherein the glass includes a concentration of sodium (Na) less than ten parts-per-million (10 ppm).

3. The capacitor in accordance with claim 1 , wherein the glass has a thickness less than one-hundred micrometers (100 um).

4. The capacitor in accordance with claim 1 , wherein the first electrode is formed of one of platinum, nickel, copper, and aluminum.

5. The capacitor in accordance with claim 1 , wherein the second electrode is formed of one of platinum, nickel, copper, and aluminum.

6. The capacitor in accordance with claim 1 , wherein the capacitor includes
a third metallization layer deposited on a bottom side of the substrate to form a third electrode;
a second dielectric layer formed of lead-lanthanum-zirconium-titanate (PLZT) deposited over the third metallization layer; and
a fourth metallization layer deposited over the second dielectric layer to form a fourth electrode.

Assignees

• Delphi Tech Inc
• Uchicago Argonne Llc

Inventors

• Fairchild Manuel Ray
• Taylor Ralph S
• Berlin Carl W
• Wong Celine Wk
• Ma Beihai
• Balachandran Uthamalingam

Classifications

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title

• H01G4/008

  Selection of materials · CPC title

• H01G4/1245 Primary

  containing also titanates · CPC title

• H01G4/306

  made by thin film techniques · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title