Polymers, photoresist compositions and methods of forming photolithographic patterns

Patent metadata

Field	Value
Publication number	US-9298093-B2
Application number	US-201113341939-A
Country	US
Kind code	B2
Filing date	Dec 31, 2011
Priority date	Dec 31, 2010
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

Polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

First claim

What is claimed is:

1. A method of forming a photolithographic pattern, comprising:
(a) providing a substrate comprising one or more layer to be patterned over a surface of the substrate;
(b) applying a layer of a photoresist composition over the one or more layer to be patterned;
(c) patternwise exposing the photoresist composition layer to actinic radiation;
(d) heating the exposed photoresist composition layer in a post-exposure bake process; and
(e) applying an organic developer to the photoresist composition layer to remove a portion of the photoresist composition layer, thereby forming a photoresist pattern, wherein unexposed regions of the photoresist layer are removed by the developer to form the photoresist pattern;
wherein the photoresist composition comprises:
a polymer comprising a first unit formed from a monomer of the following general formula (I):

wherein: R 1 represents hydrogen or a C 1 to C 3 alkyl group; R 2 represents a single bond or a C 1 to C 10 organic group; R 3 represents a hydrogen atom or a C 1 to C 10 organic group; R 4 each independently represents a hydrogen atom or a C 1 to C 10 organic group, those bonded to a common carbon atom together optionally forming a ring; and R 5 together form a C 5 or C 6 monocyclic cycloalkyl group; and

a photoacid generator.

2. The method of claim 1 , wherein the polymer further comprises a second unit comprising a lactone moiety.

3. The method of claim 2 , wherein the polymer further comprises a third unit comprising an ether, an ester, a polar group or an acid labile moiety, wherein the third unit is different from the first unit and the second unit.

4. The method of claim 1 , wherein the polymer further comprises a second unit formed from a monomer which is an acid-labile alkyl or alkyloxy (meth)acrylate.

5. The method of claim 1 , wherein the organic developer comprises a solvent chosen from ketones, esters, ethers, hydrocarbons, and mixtures thereof.

6. The method of claim 5 , wherein the solvent is 2-heptanone or 5-methyl-2-hexanone.

7. The method of claim 1 , wherein the solvent is present in the organic developer in an amount greater than 95 wt % based on the total weight of the developer.

Assignees

• Bae Young Cheol
• Meyer Matthew M
• Sun Jibin
• Lee Seung-Hyun
• Park Jong Keun
• Rohm & Haas Elect Mat
• Dow Global Technologies Llc

Inventors

• Bae Young Cheol
• Meyer Matthew M
• Sun Jibin
• Lee Seung-Hyun
• Park Jong Keun

Classifications

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/2041 Primary

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• C08F220/28

  containing no aromatic rings in the alcohol moiety · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title