Multilayer electronic component
US-2024242884-A1 · Jul 18, 2024 · US
US9293256B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9293256-B2 |
| Application number | US-201314391323-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 18, 2013 |
| Priority date | Apr 10, 2012 |
| Publication date | Mar 22, 2016 |
| Grant date | Mar 22, 2016 |
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A ceramic material for capacitors uses multilayer technology of the general formula: Pb 1−1.5a−0.5b+1.5d+e+0.5f) A a B b (Zr 1−x Ti x ) (1−c−d−e−f) Li d C e Fe f Si c O 3 +y.PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; B is selected from the group consisting of Na, K and Ag; C is selected from the group consisting of Ni, Cu, Co and Mn; and 0<a<0.12; 0.05≦x≦0.3; 0<b<0.12; 0≦c≦0.12; 0<d<0.12; 0≦e≦0.12; 0≦f≦0.12; 0≦y≦1, and wherein b+d+e+f>0.
Opening claim text (preview).
The invention claimed is: 1. A ceramic material for capacitors using multilayer technology of formula (I): Pb (1−1.5a−0.5b+1.5d+e+0.5f) A a B b (Zr 1−x Ti x ) (1−c−d−e−f) Li d C e Fe f Si c O 3 +y .PBO (I) wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; B is selected from the group consisting of Na, K and Ag; C is selected from the group consisting of Ni, Cu, Co and Mn; and 0<a<0.12 0.1≦x<0.2 0.001<b<0.12 0≦c<0.12 0≦d<0.12 0≦e<0.12 0≦f<0.12 0≦y<1, wherein b+d+e+f>0. 2. The ceramic material according to claim 1 , wherein d=e=f=0. 3. The ceramic material according to claim 1 , wherein 0.001<e<0.12; and d=f=0. 4. The ceramic material according to claim 1 , wherein B is Na. 5. The ceramic material according to claim 1 , wherein the relative permittivity at an electric field strength of 1 kV/mm is at least 60% of the relative permittivity at an electric field strength of 0 kV/mm. 6. The ceramic material according to claim 1 , wherein the relative permittivity at an electric field strength of 2 to 5 kV/mm is at least 60% of the relative permittivity at an electric field strength of 0 kV/mm. 7. The ceramic material according to claim 1 , wherein the ceramic material has a relative permittivity of at least 500 at an electric field strength of 1 kV/mm. 8. The ceramic material according to claim 1 , wherein the ceramic material has a relative permittivity of at least 500 at an electric field strength of 2 to 5 kV/mm. 9. The ceramic material according to claim 1 , wherein the ceramic material is an antiferroelectric dielectric. 10. A capacitor comprising: at least one ceramic layer composed of the ceramic material according to claim 1 ; and a conductive electrode formed on the at least one ceramic layer. 11. The capacitor according to claim 10 , wherein the conductive electrode is arranged between adjacent ceramic layers. 12. The capacitor according to claim 10 , wherein the conductive electrode comprises a base metal comprising Ag or Cu. 13. The capacitor according to claim 10 , wherein the current-carrying capacity at 100° C. is at least 1 A/μF. 14. The capacitor according to claim 10 , wherein the current-carrying capacity is at least 1 A/μF in the range of −40° C. to 150° C. 15. The capacitor according to claim 11 , wherein the conductive electrode comprises a base metal comprising Ag or Cu. 16. The capacitor according to claim 11 , wherein the current-carrying capacity at 100° C. is at least 1 A/μF. 17. The capacitor according to claim 12 , wherein the current-carrying capacity at 100° C. is at least 1 A/μF.
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