Radiation assisted electrostatic separation of semiconductor materials

Patent metadata

Field	Value
Publication number	US-9289781-B2
Application number	US-201113144869-A
Country	US
Kind code	B2
Filing date	Mar 18, 2011
Priority date	Mar 18, 2011
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A method of separating material includes providing a mixture of a first material, such as a semiconductor, and a second material, such as an insulator or a different semiconductor. The mixture can be irradiated using a light source at a wavelength that causes the first material's conductivity to increase while leaving the second material's conductivity (substantially) unchanged. Placing the mixture in contact with a ground electrode discharges the first material but not the second material due to the difference in their conductivities. Applying an electric field to the discharged mixture separates the discharged first material from the second material.

First claim

What is claimed is:

1. A method of separating material, the method comprising:
irradiating a mixture of a first material and a second material at a wavelength emitted by a light source, wherein the wavelength increases a conductivity of the first material and wherein the second material maintains its conductivity responsive to the wavelength; and
applying an electric field to the mixture, the electric field causing at least some of the first material to separate from the second material due to a difference in conductance,
wherein the wavelength corresponds to an energy that is (a) greater than a band gap energy of the first material, and (b) less than a band gap energy of the second material.

2. The method of claim 1 , wherein the first material includes a semiconductor material.

3. The method of claim 2 , wherein the first material comprises at least one of germanium, silicon germanium, copper indium diselenide, silicon, copper indium gallium diselenide, indium phosphide, gallium arsenide, cadmium telluride, copper gallium diselenide, and hydrogenated amorphous silicon.

4. The method of claim 2 , wherein the second material comprises a second semiconductor material.

5. The method of claim 1 , wherein the mixture comprises particles having an average particle volume within a range of between about 0.5 nl to about 0.3 ml.

6. The method of claim 1 , wherein the mixture comprises particles having an average particle dimension within a range of between about 100 μm and about 8.0 mm.

7. The method of claim 1 , wherein irradiating the mixture includes generating radiation with at least one of an infrared light source and a near-infrared light source.

8. The method of claim 1 , wherein the wavelength is within a range of about 730 nm to about 1860 nm.

9. The method of claim 1 , wherein the irradiating causes the conductance of the first material to be greater than the conductance of the second material.

10. The method of claim 1 , wherein applying the electric field to the mixture comprises generating the electric field between two electrodes having a potential difference within a range of about 10 V to about 30 kV.

11. The method of claim 10 , wherein one of the two electrodes comprises a ground electrode, and further comprising:
measuring a current from the ground electrode to ground; and
determining a portion of the first material excited by the electric field based on the current.

Assignees

• Yager Thomas A
• Empire Technology Dev Llc

Inventors

• Yager Thomas A

Classifications

• B03C7/08

  with material carriers in the form of belts · CPC title

• B03C7/003 Primary

  Pretreatment of the solids prior to electrostatic separation · CPC title

• B03C7/04

  with material carriers in the form of trays, troughs, or tables · CPC title

• B03C3/016

  by acoustic or electromagnetic energy, e.g. ultraviolet light · CPC title