Solid-state imaging device, light detecting device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9287314-B2
Application number	US-201414569248-A
Country	US
Kind code	B2
Filing date	Dec 12, 2014
Priority date	Dec 19, 2013
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

A solid-state imaging device includes a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light.

First claim

What is claimed is:

1. A solid-state imaging device, comprising:
a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light, wherein the MQW structure has a photoelectron conversion part, and wherein a surface layer of the photoelectron conversion part is p+.

2. The solid-state imaging device according to claim 1 ,
wherein the MQW structure has a Type II hetero interface and a thickness of each layer is set so as to form an inter-sub-band transition.

3. The solid-state imaging device according to claim 2 ,
wherein the hetero interface is formed of FeS 2 or Fe(S 1-X1 Se X1 ) 2 , ZnS or ZnS 1-X2 Se X2 , CuIn 1-Y1 Ga Y1 S 2 or CuIn 1-Y2 Ga y2 (S 1-X3 Se X3 ) 2 , or GaP or GaP 1-X4 N X4 .

4. The solid-state imaging device according to claim 3 ,
wherein the hetero interface applies compressive strain to ZnS 1-X2 Se X2 or CuIn 1-Y2 Ga Y2 (S 1-X3 Se X3 ) 2 by controlling a Se composition or applies compressive strain to GaP 1-X4 N X4 by controlling the N composition so as to cancel out tensile strain of FeS 2 or Fe(S 1-X1 Se X1 ) 2 .

5. The solid-state imaging device according to claim 3 ,
wherein the hetero interface applies tensile strain to ZnS 1-X2 Se X2 or CuIn 1-Y2 Ga Y2 (S 1-X3 Se X3 ) 2 by controlling a Se composition or a Ga composition or applies tensile strain to GaP 1-X4 N X4 by controlling the N composition so as to cancel out the compressive strain of Fe(S 1-X1 Se X1 ) 2 .

6. The solid-state imaging device according to claim 1 , comprising:
an electron barrier layer which is provided on the surface side of the MQW structure; and
an electrode which is arranged on the electron barrier layer.

7. The solid-state imaging device according to claim 6 , wherein the electron barrier layer is formed using NiO, Cu 2 O, or ZnRh 2 O 4 .

8. The solid-state imaging device according to claim 6 , wherein the thickness of the electron barrier layer is 10 nm or more.

9. The solid-state imaging device according to claim 1 ,
wherein a hole barrier layer is formed between the silicon substrate and the MQW structure or a hole barrier layer is set by increasing the thickness of the first layer only on the silicon substrate side of the MQW structure.

10. The solid-state imaging device according to claim 9 ,
wherein the hole barrier layer includes any one of ZnS or ZnS 1-X2 Se X2 , CuIn 1-Y1 Ga Y1 S 2 or CuIn 1-Y2 Ga Y2 (S 1-X3 Se X3 ) 2 , or GaP or GaP 1-X4 N X4 , and the thickness thereof is 10 nm or more.

11. The solid-state imaging device according to claim 1 ,
wherein an inclined substrate is used as the silicon substrate.

12. The solid-state imaging device according to claim 11 ,
wherein the inclined substrate is a substrate which is inclined in the <011> direction or a synthesis direction of <011> and <0-11>.

13. The solid-state imaging device according to claim 1 , which has a structure with separated pixels.

14. The solid-state imaging device according to claim 13 ,
wherein the structure with separated pixels is created by forming a groove by etching a part between pixels of a photoelectric conversion section.

15. The solid-state imaging device according to claim 13 ,
wherein the structure with separated pixels is created by setting a part between the pixels of a photoelectric conversion section to p+.

16. The solid-state imaging device according to claim 13 ,
wherein the structure with separated pixels is created by increasing the resistance of a part between the pixels of the photoelectric conversion section using ion implantation.

17. A light detecting device, comprising:
a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light, wherein the MQW structure has a photoelectron conversion part, and wherein a surface layer of the photoelectron conversion part is p+.

18. The light detecting device according to claim 17 ,
wherein the MQW structure has a Type II hetero interface and a thickness of each layer is set so as to form an inter-sub-band transition.

19. An electronic apparatus comprising:
a solid-state imaging device provided with a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light, wherein the MOW structure has a photoelectron conversion part, and wherein a surface layer of the photoelectron conversion part is p+;
an optical system which emits incident light to the solid-state imaging device; and
a signal processing circuit which processes an output signal which is output from the solid-state imaging device.

Assignees

• Sony Corp

Inventors

• Toda Atsushi

Classifications

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title

• H10F77/143

  comprising quantum structures · CPC title

• H10F39/022

  of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe · CPC title

• H10F30/222

  the potential barrier being a PN heterojunction · CPC title

• H10F39/184 Primary

  Infrared image sensors · CPC title