Organic x-ray detector assembly and method of manufacturing same

Patent metadata

Field	Value
Publication number	US-9285489-B2
Application number	US-201314014003-A
Country	US
Kind code	B2
Filing date	Aug 29, 2013
Priority date	Aug 29, 2013
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

An x-ray detector assembly is disclosed that includes a mounting substrate having a plurality of electrical contacts, the mounting substrate comprising one of an integrated circuit and a circuit board. The x-ray detector assembly also includes a first electrode patterned on a first portion of a top surface of the mounting substrate, wherein the first electrode is electrically coupled to the plurality of electrical contacts. An organic photodiode layer is formed atop the first electrode and has a bottom surface electrically connected to the first electrode. A second electrode is coupled to a top surface of the organic photodiode layer and a scintillator is coupled to the second electrode.

First claim

What is claimed is:

1. An x-ray detector assembly comprising:
a mounting substrate comprising a plurality of electrical contacts, the mounting substrate comprising one of an integrated circuit and a circuit board;
a first electrode patterned on a first portion of a top surface of the mounting substrate, wherein the first electrode is electrically coupled to the plurality of electrical contacts;
an organic photodiode layer formed atop the first electrode and having a bottom surface electrically connected to the first electrode;
a second electrode coupled to a top surface of the organic photodiode layer; and
a scintillator coupled to the second electrode;
wherein the mounting substrate comprises a flexible substrate; and
wherein the bottom surface of the organic photodiode layer is formed atop a second portion of the top surface of the mounting substrate.

2. The x-ray detector assembly of claim 1 further comprising a planarization layer between the mounting substrate and the organic photodiode layer, the planarization layer comprising one of polyimide, acrylate, and silicon.

3. The x-ray detector assembly of claim 1 further comprising a solder mask layer provided between the mounting substrate and the organic photodiode layer.

4. The x-ray detector assembly of claim 1 wherein the mounting substrate comprises an FR-4 substrate.

5. The x-ray detector assembly of claim 4 further comprising an application-specific integrated circuit (ASIC) coupled to a bottom surface of the mounting substrate.

6. The x-ray detector assembly of claim 1 wherein the mounting substrate comprises an ASIC.

7. The x-ray detector assembly of claim 1 wherein the second electrode comprises a transparent, unpatterned layer.

8. The x-ray detector assembly of claim 1 wherein the organic photodiode layer comprises a donor material and an acceptor material;
wherein the donor material comprises a low bandgap polymer; and
wherein the acceptor material comprises a fullerene material.

9. The x-ray detector assembly of claim 8 wherein the donor material has a highest occupied molecular orbital (HOMO) greater than or equal to 4.9 eV.

10. The x-ray detector assembly of claim 8 wherein the fullerene material comprises a phenyl-C 61 -butyric acid methyl ester (PCBM) material.

11. A method of manufacturing an x-ray detector assembly for a computed tomography (CT) system comprising:
providing a mounting substrate, the mounting substrate comprising one of an application-specific integrated circuit (ASIC) and a circuit board;
patterning a bottom electrode on a first portion of a top surface of the mounting substrate such that the bottom electrode is electrically coupled to electrical connections of the mounting substrate;
coating the bottom electrode with an organic photodiode solution;
coating a second portion of the top surface of the mounting substrate with the organic photodiode solution;
disposing a top electrode on the organic photodiode solution; and
optically coupling a scintillator array to the top electrode.

12. The method of claim 11 further comprising:
depositing a smoothing layer on the mounting substrate prior to patterning the bottom electrode;
forming a pattern of vias through the smoothing layer, the pattern of vias aligned with the electrical connections of the mounting substrate; and
patterning the bottom electrode on a top surface of the smoothing layer and through the plurality of vias.

13. The method of claim 12 further comprising mixing a low bandgap polymer, a fullerene material, and a solvent to form the organic photodiode solution.

14. The method of claim 11 further comprising:
disposing the top electrode in a continuous layer coating a top surface of the organic photodiode solution; and
patterning the bottom electrode to form a plurality of detector pixels.

15. A computed tomography (CT) detector assembly comprising:
a first detector sub-assembly comprising a rigid semiconductor photodiode substrate; and
a second detector sub-assembly coupled to the first detector sub-assembly, the second detector sub-assembly comprising:
a flexible substrate layer having a plurality of electrically conductive vias formed through a thickness thereof;
a first electrode having a bottom surface coupled to the plurality of conductive vias;
an organic photodiode layer having a bottom surface coupled to a top surface of the first electrode;
a second electrode having a bottom surface coupled to a top surface of the organic photodiode layer; and
a scintillator array coupled to a top surface of the second electrode;

wherein the bottom surface of the organic photodiode layer coats a first portion of a top surface of the flexible substrate layer and a top surface of the first electrode; and
wherein a portion of the bottom surface of the first electrode is coupled to a second portion of the top surface of the flexible substrate layer.

16. The CT detector assembly of claim 15 wherein second detector sub-assembly further comprises:
a first detector section coupled to a first side of the first detector sub-assembly; and
a second detector section coupled to a second side of the first detector sub-assembly.

17. The CT detector assembly of claim 15 further comprising at least one of a wherein the top electrode comprises a transparent, unpatterned layer.

18. The CT detector assembly of claim 15 wherein the organic photodiode layer comprises:
a donor material comprising a low bandgap polymer; and
an acceptor material comprising a fullerene material.

19. The CT detector assembly of claim 15 further comprising an application specific integrated circuit (ASIC) coupled to a bottom surface of the flexible substrate layer.

Assignees

• Gen Electric

Inventors

• Couture Aaron Judy
• Schaepkens Marc
• Ikhlef Abdelaziz

Classifications

• H10F39/811 Primary

  Interconnections · CPC title

• Y10T29/49155

  Manufacturing circuit on or in base · CPC title

• G01T1/2018 Primary

  Scintillation-photodiode combinations · CPC title

• G01T1/20

  with scintillation detectors · CPC title