Semiconductor device comprising contact trenches

Patent metadata

Field	Value
Publication number	US-9281359-B2
Application number	US-201213589717-A
Country	US
Kind code	B2
Filing date	Aug 20, 2012
Priority date	Aug 20, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor body including a first side and a second side opposite to the first side;
contact trenches extending, from the first and second sides, through a dielectric and into the semiconductor body, the contact trenches including conductive material electrically coupled to the semiconductor body via sidewalls, wherein the contact trenches include:
a first contact trench extending through a first dielectric and into the semiconductor body at the first side, wherein the first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench;
a plurality of second contact trenches extending through a second dielectric and into the semiconductor body at the second side, wherein the second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench, the first conductive material and the second conductive material being electrically disconnected, wherein the plurality of second contact trenches differ by at least one of shape, layout, and depth;

a first contact pattern surrounded by the first dielectric at the first side; and
a second contact pattern surrounded by the second dielectric at the second side, wherein the first conductive material is electrically coupled to a first semiconductor region of a first conductivity type via a sidewall of the first contact trench; and the first conductive material is electrically coupled to a second semiconductor region of a second conductivity type via a bottom side of the first contact trench, the second conductivity type being complementary to the first conductivity type, and
wherein the second conductive material is electrically coupled to a third semiconductor region of the first conductivity type via a sidewall of at least one of the second contact trenches; and the second conductive material is electrically coupled to a fourth semiconductor region of the second conductivity type via a bottom side of at least one of the second contact trenches,
wherein the conductive material covers a surface of the semiconductor body at the second side and at least partly fills the second trenches; and
wherein an outer surface of the conductive material at the second side is predominantly flat and includes a recess congruent with the second contact trenches.

2. The semiconductor device of claim 1 , wherein the semiconductor device is a vertical semiconductor device including a first device terminal at the first side and a second device terminal at the second side.

3. The semiconductor device of claim 1 , wherein a width of the second contact trench ranges between 0.1 μm and 10 μm.

4. The semiconductor device of claim 1 , wherein a depth of the second contact trench ranges between 0.1 μm and 50 μm.

5. The semiconductor device of claim 1 , wherein the first and second conductive materials include one or a combination of Ti, TiN, W, TiW, Ta, Cu, Al, AlSiCu, and AlCu.

6. The semiconductor device of claim 1 , wherein at least one of the first and second contact trenches is at least partly filled with a metal or metal alloy configured to induce a compressive strain in the semiconductor body surrounding the second contact trench.

7. The semiconductor device of claim 1 , wherein the semiconductor body is a silicon semiconductor body and at least one of the first and second conductive materials includes one of Cu, a combination of W and Cu, and a combination of a diffusion barrier, W, and Cu.

8. The semiconductor device of claim 1 , wherein an angle between a sidewall of the second contact trench and a direction perpendicular to the second side ranges between 0° and 44°.

9. The semiconductor device of claim 1 , wherein a plurality of the second contact trenches includes a first number of the second contact trenches in a cell array and a second number of the second trenches in an edge area surrounding the cell array; and wherein a percentage of area of the second number of the second contact trenches in the edge area is higher than a percentage of area of the first number of the second contact trenches in the cell array.

10. The semiconductor device of claim 1 , wherein a thickness of the semiconductor body between the first side and the second side ranges between 5 μm and 50 μm.

11. A semiconductor device comprising:
a semiconductor body including a first side and a second side opposite to the first side;
contact trenches extending, from the first and second sides, through a dielectric and into the semiconductor body, the contact trenches including conductive material electrically coupled to the semiconductor body via sidewalls, wherein the contact trenches include:
a first contact trench extending through a first dielectric and into the semiconductor body at the first side, wherein the first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench;
a second contact trench extending through a second dielectric and into the semiconductor body at the second side, wherein the second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench, the first conductive material and the second conductive material being electrically disconnected;

a first contact pattern surrounded by the first dielectric at the first side; and
a second contact pattern surrounded by the second dielectric at the second side, wherein the first conductive material is electrically coupled to a first semiconductor region of a first conductivity type via a sidewall of the first contact trench; and the first conductive material is electrically coupled to a second semiconductor region of a second conductivity type via a bottom side of the first contact trench, the second conductivity type being complementary to the first conductivity type, and
wherein the second conductive material is electrically coupled to a third semiconductor region of the second conductivity type via a sidewall of the second contact trench; and the second conductive material is electrically coupled to a fourth semiconductor region of the first conductivity type via a bottom side of the second contact trench.

Assignees

• Zundel Markus
• Meiser Andreas
• Lang Hans-Peter
• Meyer Thorsten
• Irsigler Peter
• Infineon Technologies Ag

Inventors

• Zundel Markus
• Meiser Andreas
• Lang Hans-Peter
• Meyer Thorsten
• Irsigler Peter

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title

• H10W20/021

  of interconnections within wafers or substrates · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title