Bonding pad for thermocompression bonding, process for producing a bonding pad and component

Patent metadata

Field	Value
Publication number	US-9281280-B2
Application number	US-201313954649-A
Country	US
Kind code	B2
Filing date	Jul 30, 2013
Priority date	Aug 1, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A bonding pad for thermocompression bonding of a carrier material to a further carrier material includes a base layer and a top layer. The base layer is made of metal, is deformable, and is connected to the carrier material. The metal is nickel-based. The top layer is metallic and is connected directly to the base layer. The top layer is arranged at least on a side of the base layer which faces away from the carrier material. The top layer has a smaller layer thickness than the base layer. In at least one embodiment, the top layer has a greater oxidation resistance than the base layer.

First claim

What is claimed is:

1. A component, comprising:
a first carrier material, which on a first surface, has at least one bonding pad, the at least one bonding pad including:
a deformable base layer made of metal, which is connected to the first carrier material, the metal being nickel-based; and
a metallic top layer connected directly to the deformable base layer and arranged at least on a side of the deformable base layer which faces away from the first carrier material,
wherein a layer thickness of the metallic top layer is smaller than a layer thickness of the deformable base layer, and
wherein an oxidation resistance of the metallic top layer is greater than an oxidation resistance of the deformable base layer; and

a second carrier material arranged at a distance from the first carrier material and having a second surface which faces toward the first surface of the first carrier material,
wherein the second carrier material has, on the second surface, a contact point which is arranged lying opposite the at least one bonding pad and is configured to rest on the at least one bonding pad,
wherein the contact point is connected to the at least one bonding pad,
wherein a contour of the at least one bonding pad is configured to correspond to an outline of the contact point within a tolerance range, and
wherein the contact point is formed as a further bonding pad, the further bonding pad including:
a further deformable base layer made of metal, which is connected to the second carrier material, the metal being nickel-based; and
a further metallic top layer connected directly to the further deformable base layer and arranged at least on a side of the further deformable base layer which faces away from the second carrier material,

wherein a layer thickness of the further metallic top layer is smaller than a layer thickness of the further deformable base layer, and
wherein an oxidation resistance of the further metallic top layer is greater than an oxidation resistance of the further deformable base layer.

2. The component according to claim 1 , wherein at least one of the contour of the bonding pad and the outline of the contact point is closed circumferentially like a ring around an inner space between the first carrier material and the second carrier material.

3. The component according to claim 1 , further comprising:
at least one additional bonding pad; and
at least one additional contact point.

4. The component according to claim 3 , wherein a height of the bonding pad and a height of the at least one additional bonding pad are the same over the surface of the carrier material.

5. The component according to claim 1 , wherein at least the first carrier material has a MEMS sensor element.

6. The component according to claim 1 , wherein:
at least one of the first carrier material and the second carrier material includes a chip wiring layer partially covered by a dielectric layer,
the dielectric layer includes at least one opening in a region of the chip wiring, and
the deformable base layer fills the at least one opening.

7. The component according to claim 1 , wherein:
at least one of the first carrier material and the second carrier material includes a chip wiring layer partially covered by a dielectric layer,
the metallic top layer corresponding to the at least one of the first carrier material and the second carrier material directly contacts the dielectric layer such that the metallic top layer and the dielectric layer completely cover top and side surfaces of the deformable base layer corresponding to the at least one of the first carrier material and the second carrier material.

8. The component according to claim 1 , wherein:
the first carrier material includes a first chip wiring layer partially covered by a first dielectric layer,
the first dielectric layer includes at least one opening in a region of the first chip wiring layer,
the deformable base layer fills the at least one opening,
the second carrier material includes a second chip wiring layer partially covered by a second dielectric layer,
the second dielectric layer includes at least one opening in a region of the second chip wiring layer, and
the further deformable base layer fills the at least one opening.

9. The component according to claim 1 , wherein:
the first carrier material includes a first chip wiring layer partially covered by a first dielectric layer,
the metallic top layer directly contacts the first dielectric layer such that the metallic top layer and the dielectric layer completely cover the deformable base layer,
the second carrier material includes a second chip wiring layer partially covered by a second dielectric layer, and
the further metallic top layer directly contacts the second dielectric layer such that the further metallic top layer and the dielectric layer completely cover top and side surfaces of the further deformable base layer.

Assignees

• Bosch Gmbh Robert

Inventors

• Schelling Christoph
• Borowsky David

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/07332

  Compression bonding, e.g. thermocompression bonding · CPC title

• H10W72/07236

  Soldering or alloying · CPC title