Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9281268B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9281268-B2 |
| Application number | US-201213517591-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2012 |
| Priority date | Mar 9, 2010 |
| Publication date | Mar 8, 2016 |
| Grant date | Mar 8, 2016 |
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A multi-level interposer plate and a multi-chip module (MCM) that includes the multi-level interposer plate are described. First surfaces and second surfaces in different regions of the multi-level interposer plate have associated, different thicknesses. Moreover, first micro-spring connectors and second micro-spring connectors are respectively disposed on the first surfaces and the second surfaces. In the MCM, a given one of the first surfaces of the multi-level interposer plate faces a bridge chip in a first layer in an array of chips in the MCM so that first connectors, disposed on the bridge chip, mechanically and electrically couple to the first micro-spring connectors. Similarly, a given one of the second surfaces of the multi-level interposer plate faces an island chip in a second layer in the array of chips so that second connectors, disposed on the island chip, mechanically and electrically couple to the second micro-spring connectors.
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a multi-level interposer plate for use in an multi-chip module, comprising: defining first micro-spring connectors on first surfaces of first substrates, wherein the first substrates have a first thickness; defining second micro-spring connectors on second surfaces of second substrates, wherein the second substrates have a second thickness, wherein the second thickness is greater than the first thickness; attaching the first substrates and the second substrates to a mechanical alignment plate; and mechanically coupling the first substrates and the second substrates to a base plate, thereby fabricating the multi-level interposer plate. 2. The method of claim 1 , wherein the method further includes detaching the mechanical alignment plate. 3. The method of claim 1 , wherein a micro-spring connector on a substrate is fabricated by: depositing a metal layer on the substrate; and forming a portion of the metal layer into the micro-spring connector. 4. The method of claim 3 , wherein depositing the metal layer on the substrate comprises: depositing a stress-engineered metal layer on the substrate; and depositing a titanium release layer on the stress-engineered metal layer. 5. The method of claim 4 , wherein forming the portion of the metal layer into the micro-spring connector comprises: depositing a photoresist on the metal layer; developing a region of the photoresist proximate to the portion of the metal layer; performing at least one etching operation to expose the portion of the metal layer; and removing the titanium release layer in the portion of the metal layer to release the stress-engineered metal layer in the portion of the metal layer, the released stress-engineered metal layer in the portion of the metal layer forming the micro-spring connector. 6. The method of claim 5 , wherein the method further comprises: depositing a conductive material on the released portion of the stress-engineered metal layer. 7. The method of claim 3 , wherein the method further comprises: fabricating one or more recessed regions in the substrate; wherein depositing the stress-engineered metal layer on the substrate comprises depositing the stress engineered metal layer in the recessed region in the substrate; and wherein forming the portion of the metal layer into the micro-spring connector comprises forming a portion of the metal layer in the recessed region into the micro-spring connector. 8. The method of claim 3 , wherein the method further comprises: depositing a dielectric layer on the substrate; and depositing the metal layer on the dielectric layer. 9. The method of claim 3 , wherein the method further comprises: fabricating one or more thru-substrate vias in the substrate.
Elastic or compliant interconnections, e.g. springs, cantilevers or elastic pads · CPC title
characterised by non-galvanic coupling between the chips, e.g. capacitive coupling · CPC title
comprising holes having chips therein · CPC title
for alignment · CPC title
for use after dicing · CPC title
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