Method to fabricate a substrate including a material disposed on the edge of one or more non through hole formed in the substrate

Patent metadata

Field	Value
Publication number	US-9277656-B2
Application number	US-201414551977-A
Country	US
Kind code	B2
Filing date	Nov 24, 2014
Priority date	Nov 29, 2013
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least the steps of:
etching the blind hole through a first face of the substrate, depositing a continuous layer of getter material on the whole of the first face of the substrate and at least on the side walls of the blind hole, etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material, in which the step of etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.

First claim

The invention claimed is:

1. Method for producing a substrate comprising at least one getter material arranged on the walls of at least one blind hole, comprising at least:
etching the at least one blind hole through a first face of the substrate,
depositing a layer of getter material in a continuous manner on the whole of the first face of the substrate and at least on the side walls of the at least one blind hole,
etching part of the layer of getter material located on the first face of the substrate such that said first face of the substrate is no longer covered by the getter material,
in which the etching part of the layer of getter material comprises the implementation of an etching by ion beam machining, or chemical-mechanical planarization or polishing.

2. Method according to claim 1 , in which the layer of getter material is also deposited on a bottom wall of the at least one blind hole.

3. Method according to claim 2 , in which the etching part of the layer of getter material is implemented such that the getter material deposited on the bottom wall of the at least one blind hole is also etched.

4. Method according to claim 1 , further comprising, between the etching the at least one blind hole and the depositing the layer of getter material, a depositing a protective dielectric layer on the first face of the substrate and at least on the side walls of the at least one blind hole, the layer of getter material then being deposited on the protective dielectric layer.

5. Method according to claim 4 , in which the etching part of the layer of getter material also carries out the etching of part of the protective dielectric layer located on the first face of the substrate such that said first face of the substrate is no longer covered by the protective dielectric layer.

6. Method according to claim 1 , further comprising, before the etching the at least one blind hole, a depositing a protective dielectric layer on the first face of the substrate, the at least one blind hole then also being etched through the protective dielectric layer.

7. Method according to claim 1 , in which the at least one blind hole comprises, in a plane parallel to the first face of the substrate, a section of circular and/or polygonal shape, or in which the at least one blind hole corresponds to a trench passing through part of the thickness of the substrate.

8. Method according to claim 1 , in which the etching the at least one blind hole makes several blind holes through the first face of the substrate, and the layer of getter material is deposited at least on the side walls of the blind holes.

9. Method according to claim 8 , in which at least one part of the at least one blind holes are produced as a regular network of holes.

10. Method according to claim 1 , further comprising, before the etching the at least one blind hole:
making of at least one microelectronic device on the first face of the substrate, the at least one blind hole(s) being etched next to the at least one microelectronic device, and/or
making of at least one electrically conductive element on the first face of the substrate, the at least one blind hole(s) being etched next to the electrically conductive element.

11. Method according to claim 1 , in which the layer of getter material comprises at least one of the following elements: titanium, zirconium, aluminium, lanthanum, hafnium, chromium, cobalt, iron, magnesium, manganese, molybdenum, niobium, tantalum, vanadium.

12. Method of encapsulation of at least one microelectronic device, comprising the implementation of a method for producing a substrate according to claim 1 , and further comprising encapsulation of the microelectronic device in a cavity in which one or several walls are formed by said substrate and such that the at least one blind hole(s) are arranged in the cavity, the microelectronic device being made on said substrate or said substrate forming a cover of the cavity in which the microelectronic device is encapsulated.

Assignees

• Commissariat Energie Atomique
• Comissariat A L Énergie Atomique Et Aux Énergies Alternatives

Inventors

• Giroud Sophie
• Ferrandon Christine

Classifications

• H10W76/60 Primary

  Seals · CPC title

• H10W76/48

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• B81C1/00285

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title

• C23F1/04

  Chemical milling · CPC title