Magnetoelectric composites

Patent metadata

Field	Value
Publication number	US-9276192-B2
Application number	US-201313848145-A
Country	US
Kind code	B2
Filing date	Mar 21, 2013
Priority date	Mar 22, 2012
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Disclosed is a magnetoelectric (ME) composite including both a piezoelectric material and a magnetostrictive material, wherein a piezoelectric single crystal material having high piezoelectric properties is used as the piezoelectric material, and a metal magnetostrictive material having high magnetostrictive properties is used as the magnetostrictive material, thus achieving an ME composite having a layered structure via adhesion. When the ME layered composite is manufactured such that a <011> crystal orientation of the piezoelectric single crystal material is set to a thickness direction, high ME voltage coefficient, which is at least doubled, compared to a conventional <001> crystal orientation, can be obtained, and such an effect is further maximized in the resonance of the composite.

First claim

What is claimed is:

1. A magnetoelectric composite, comprising at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material, which are stacked, wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.

2. The magnetoelectric composite of claim 1 , wherein a crystal structure of the single crystals is a perovskite structure.

3. The magnetoelectric composite of claim 1 , wherein the single crystals are a solid solution comprising xPb (A, B)O3+(1−x)PbTiO3 (wherein x is a molar fraction, 0<x<1), in which A is any one or a plurality of elements selected from the group consisting of Zn, Mg, Ni, Lu, In and Sc, and B is any one or a plurality of elements selected from the group consisting of Nb, Ta, Mo and W.

4. The magnetoelectric composite of claim 1 , wherein the single crystals are any one selected from among Pb (Mg 1/3 Nb 2/3 )O 3 —PbTiO 3 (PMN-PT), Pb (Zn 1/3 Nb 2/3 )O 3 —PbTiO 3 (PZN-PT), and BaTiO 3 .

5. The magnetoelectric composite of claim 1 , wherein the magnetostrictive material is any one selected from among ferrite-based ceramics, Ni, Terfenol, Gafenol, Fe and Metglas.

6. The magnetoelectric composite of claim 1 , wherein the magnetostrictive material layer and the piezoelectric material layer are alternately stacked.

7. The magnetoelectric composite of claim 1 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.

8. The magnetoelectric composite of claim 1 , wherein a thickness ratio of the piezoelectric material layer and the magnetostrictive material layer is 0.4˜2.

9. A magnetoelectric composite, comprising:
a first magnetostrictive material layer composed of a magnetostrictive material;
a piezoelectric material layer composed of a piezoelectric material; and
a second magnetostrictive material layer composed of a magnetostrictive material,
wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.

10. The magnetoelectric composite of claim 9 , wherein a crystal structure of the single crystals is a perovskite structure.

11. The magnetoelectric composite of claim 9 , wherein the single crystals are a solid solution comprising xPb (A, B)O3+(1−x)PbTiO3 (wherein x is a molar fraction, 0<x<1), in which A is any one or a plurality of elements selected from the group consisting of Zn, Mg, Ni, Lu, In and Sc, and B is any one or a plurality of elements selected from the group consisting of Nb, Ta, Mo and W.

12. The magnetoelectric composite of claim 9 , wherein the single crystals are any one selected from among Pb (Mg 1/3 Nb 2/3 )O 3 —PbTiO 3 (PMN-PT), Pb (Zn 1/3 Nb 2/3 )O 3 —PbTiO 3 (PZN-PT), and BaTiO 3 .

13. The magnetoelectric composite of claim 9 , wherein the magnetostrictive material is any one selected from among ferrite-based ceramics, Ni, Terfenol, Gafenol, Fe and Metglas.

14. The magnetoelectric composite of claim 9 , wherein a thickness ratio of the piezoelectric material layer and the first or second magnetostrictive material layer is 0.4˜2.

15. The magnetoelectric composite of claim 9 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.

16. An electronic device, which comprises a magnetoelectric composite having a magnetoelectric effect and comprising at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material, which are stacked and in which the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.

17. The electronic device of claim 16 , wherein the electronic device is any one selected from among a spintronic device, an ultrahigh-speed information storage device, a magnetic-electric sensor, a magnetic sensor, an electric sensor, an optoelectronic device, a microwave electronic device, a magnetic-electric transducer, an electric-magnetic transducer, a magnetic driving energy harvester, and a magnetic-mechanical composite energy harvester.

18. The electronic device of claim 17 , wherein the electronic device utilizes the magnetoelectric effect.

19. The electronic device of claim 18 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.

20. A method of manufacturing a magnetoelectric composite, comprising:
preparing at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material; and
alternately stacking the piezoelectric material layer and the magnetostrictive material layer, wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.

21. The method of claim 20 , further comprising applying a conductive epoxy adhesive onto a surface for bonding the piezoelectric material layer and the magnetostrictive material layer to each other, after preparing.

Assignees

• Korea Mach & Materials Inst

Inventors

• Ryu Jungho
• Kim Jong-Woo
• Yoon Woon-Ha
• Park Dong-Soo

Classifications

• H01L41/16

  Electricity · mapped topic

• Y10T428/31678

  Of metal · CPC title

• Y10T156/10

  Methods of surface bonding and/or assembly therefor · CPC title

• Y10T428/2495

  Thickness [relative or absolute] · CPC title

• H01L41/12 Primary

  Electricity · mapped topic