Method for manufacturing light emitting device and light emitting device

Patent metadata

Field	Value
Publication number	US-9276180-B2
Application number	US-201314074084-A
Country	US
Kind code	B2
Filing date	Nov 7, 2013
Priority date	Nov 9, 2012
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

First claim

What is claimed is:

1. A method for manufacturing a light emitting device, the light emitting device comprising a light emitting element disposed over a substrate, and a reflective resin disposed along a side surface of the light emitting element, the method comprising the steps of:
disposing a plurality of light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element other than the light emitting element in between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements disposed in the matrix;
after disposing phosphor layers over the respective upper surfaces of the light emitting elements, disposing a reflective resin along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers to cover the semiconductor elements; and
simultaneously cutting the reflective resin and the substrate disposed in between the adjacent light emitting elements in one of the column and row directions and between the light emitting element and the semiconductor element adjacent thereto in the other direction of the column and row directions so as to include at least one light emitting element and one semiconductor element, wherein, in the step of cutting, cutting is performed in a vertical direction including the light emitting element and the semiconductor element such that a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a cross-sectional view.

2. The method for manufacturing a light emitting device according to claim 1 , wherein the semiconductor element is disposed between the light emitting element and another adjacent light emitting element having a larger one of a distance between the adjacent light emitting elements in one direction of the column and row directions and another distance between the adjacent light emitting elements in the other direction of the column and row directions.

3. The method for manufacturing a light emitting device according to claim 1 , wherein in the step of cutting, cutting is performed such that another corner formed by a side surface of the reflective resin on the light emitting element side and the upper surface of the reflective resin forms an obtuse angle in the cross-sectional view.

4. The method for manufacturing a light emitting device according to claim 1 , wherein a deepest part of a recessed portion formed at the upper surface of the reflective resin is formed directly above the semiconductor element.

5. The method for manufacturing a light emitting device according to claim 4 , wherein the deepest part of the recessed portion formed at the upper surface of the reflective resin is formed directly above a center of the upper surface of the semiconductor element.

6. The method for manufacturing a light emitting device according to claim 1 , wherein an adhesive layer is formed such that, in the vertical cross-sectional view of the side surface of the light emitting element, the adhesive layer extends at a corner formed by the side surface of the light emitting element and the surface on the light emitting element side of surface of the phosphor layer, and such that the adhesive layer has a roughly triangular cross section so that the thickness of the adhesive layer is decreased toward the lower part of the light emitting element.

Assignees

• Nichia Corp

Inventors

• Ishida Masashi
• Sato Daisuke
• Kitajima Tadayuki

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/121

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title