Method for forming photo-mask and OPC method

Patent metadata

Field	Value
Publication number	US-9274416-B2
Application number	US-201314023476-A
Country	US
Kind code	B2
Filing date	Sep 11, 2013
Priority date	Sep 11, 2013
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method.

First claim

What is claimed is:

1. A method for forming a photo-mask, comprising:
providing a first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line, wherein the original second photo-mask pattern is defined only at an intersection of the first photo-mask pattern and the third photo-mask pattern, the first metal line, the first via plug and the second line are disposed in sequence in a semiconductor structure, and the first line extends along a first direction, the second line extends along a second direction, the first via plug is disposed at the intersection of the first line and the second line;
performing a first optical proximity correction (OPC) process by using a computer, comprising a comparing step and/or a modification step for the original second photo-mask pattern;
performing a second OPC process, comprising enlarging a width of the original second photo-mask pattern along the second direction, wherein after the first OPC process and the second OPC process, the original second photo-mask pattern becomes a revised second photo-resist pattern;
after the second OPC process, performing a contour simulation process to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern; and
outputting the first photo-mask pattern to form a first photo-mask, outputting the revised second photo-mask pattern to form a second photo-mask, and outputting the third photo-mask pattern to form a third photo-mask.

2. A method for forming a photo-mask according to claim 1 , wherein the second OPC process is performed after the first OPC process.

3. A method for forming a photo-mask according to claim 1 , wherein the second OPC process comprises a Boolean process.

4. A method for forming a photo-mask according to claim 1 , wherein the second OPC process further comprises reducing a length of the original second photo-mask pattern along the first direction.

5. A method for forming a photo-mask according to claim 1 , wherein the first direction is substantially perpendicular to the second direction.

6. A method for forming a photo-mask according to claim 1 , wherein the semiconductor structure is formed by a self aligned via process by using the first photo-mask, the second photo-mask and the third photo-mask.

7. An optical proximity correction (OPC) process, comprising:
providing a first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line, wherein the original second photo-mask pattern is defined only at an intersection of the first photo-mask pattern and the third photo-mask pattern, the first line, the first via plug and the second line are disposed in sequence in a semiconductor structure, and the first line extends along a first direction, the second line extends along a second direction, the first via plug is disposed at the intersection of the first line and the second line;
performing a first optical proximity correction (OPC) process by using a computer, comprising a comparing step and/or a modification step for the original second photo-mask pattern;
performing a second OPC process, comprising enlarging a width of the original second photo-mask pattern along the second direction, wherein after the first OPC process and the second OPC process, the original second photo-mask pattern becomes a revised second photo-resist pattern; and
after the second OPC process, performing a contour simulation process to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern.

8. An OPC method according to claim 7 , wherein the second OPC process is performed after the first OPC process.

9. An OPC method according to claim 7 , wherein the second OPC process comprises a Boolean process.

10. An OPC method according to claim 7 , wherein the second OPC process further comprises reducing a length of the original second photo-mask pattern along the first direction.

Assignees

• United Microelectronics Corp

Inventors

• Huang Chun-Hsien
• Chen Ming-Jui
• Huang Chia-Wei
• Chen Hsin-Yu
• Chuang Kai-Lin

Classifications

• G03F1/144

  Physics · mapped topic

• G03F1/72 Primary

  Repair or correction of mask defects · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title