Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9269735-B2
Application number	US-201113308854-A
Country	US
Kind code	B2
Filing date	Dec 1, 2011
Priority date	Dec 8, 2010
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

The present disclosure provides a method of manufacturing a solid-state imaging device, including, forming on a first substrate a semiconductor thin film which is to be photoelectric conversion sections, forming driving circuits on a face side of a second substrate, laminating the first substrate and the second substrate by disposing the first substrate and second substrate opposite to each other in a condition in which the semiconductor thin film is connected to the driving circuits, and removing the first substrate from the semiconductor thin film in a condition in which the semiconductor thin film is left on the second substrate side.

First claim

What is claimed is:

1. A method of manufacturing a solid-state imaging device, comprising:
forming a semiconductor thin film on a first substrate;
forming isolation regions spanning an entire thickness of the semiconductor thin film such that the semiconductor thin film is provided with distinct photoelectric conversion sections;
forming driving circuits and an interlayer dielectric film on a second substrate, the interlayer dielectric film comprising contact holes;
forming first pixel electrodes over the interlayer dielectric film such that the first pixel electrodes are not embedded within the interlayer dielectric film, the first pixel electrodes being connected to corresponding gate electrodes of the driving circuits via the contact holes, each of the first pixel electrodes covering at least portions of a respective gate electrode, a respective source region, and a respective drain region;
forming second pixel electrodes on the semiconductor thin film;
laminating the first substrate and the second substrate together with the photoelectric conversion sections and isolation regions of the first substrate facing the first pixel electrodes of the second substrate such that (a) each first pixel electrode is in contact with a respective second pixel electrode and overlaps a respective photoelectric conversion section, (b) each second pixel electrode is spaced from the interlayer dielectric film, and (c) the semiconductor thin film is connected to the driving circuits; and
removing the first substrate from the semiconductor thin film such that the photoelectric conversion sections and the isolation regions remain secured to the second substrate.

2. The method according to claim 1 , further comprising forming the semiconductor thin film by epitaxial growth on the first substrate, the first substrate being a single crystal material.

3. The method according to claim 2 , further comprising:
connecting the distinct photoelectric conversion sections to the driving circuits while performing the lamination.

4. The method according to claim 3 , further comprising:
connecting the driving circuits to the semiconductor thin film with the second pixel electrodes while performing the lamination.

5. The method according to claim 4 , wherein the second pixel electrodes are each formed on the basis of each of the distinct photoelectric conversion sections so as to cover a whole surface of the respective photoelectric conversion section.

6. The method according to claim 1 , further comprising forming a protective film on an upper side of the semiconductor thin film after the removal of the first substrate.

7. The method according to claim 6 , wherein the protective film is a material having a fixed charge.

8. The method according to claim 7 , wherein the material having the fixed charge is a transparent electrode.

9. The method of claim 7 , wherein the material having the fixed charge is silicon oxide with an impurity, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, or tantalum oxide.

10. The method according to claim 1 , wherein the driving circuits comprise a global shutter circuit.

11. The method of claim 1 , wherein the isolation regions are formed by implanting ions into the semiconductor thin film.

12. A solid-state imaging device comprising:
driving circuits on a substrate;
an interlayer dielectric film comprising contact holes on the substrate;
respective first pixel electrodes disposed over a surface of the interlayer dielectric film such that the first pixel electrodes are not embedded within the interlayer dielectric film, the first pixel electrodes being connected to corresponding gate electrodes of the driving circuits via the contact holes, each of the first pixel electrodes covering at least portions of a respective gate electrode, a respective source region, and a respective drain region;
respective isolated photoelectric conversion sections of a semiconductor thin film secured on the substrate, the photoelectric conversion sections being respectively connected to the driving circuits; and
respective second pixel electrodes between the first pixel electrodes and the photoelectric conversion sections, each second pixel electrode being in contact with a respective first pixel electrode and being spaced from the interlayer dielectric film, each second pixel electrode covering a whole surface of the respective photoelectric conversion section wherein each of the first pixel electrodes is smaller in plan view than the respective photoelectric conversion section.

13. The solid-state imaging device of claim 12 , wherein each of the second pixel electrodes, in plan view, has a same shape as the respective photoelectric conversion section.

14. The solid-state imaging device of claim 12 , wherein the semiconductor thin film comprises a crystalline chalcopyrite structure.

15. An electronic apparatus comprising:
a solid-state imaging device;
an optical system operable to guide incident light to an imaging area of the solid-state imaging device; and
a signal processing circuit operable to process an output signal from the solid-state imaging device,
wherein,
the solid-state imaging device includes
(a) an array of driving circuits on a substrate,
(b) an interlayer dielectric film comprising contact holes on the substrate;
(c) respective first pixel electrodes disposed over a surface of the interlayer dielectric film such that the first pixel electrodes are not embedded within the interlayer dielectric film, the first pixel electrodes being connected to corresponding gate electrodes of the driving circuits via the contact holes, each of the first pixel electrodes covering at least portions of a respective gate electrode, a respective source region, and a respective drain region, and
(d) respective isolated photoelectric conversion sections of a semiconductor thin film secured on the substrate, the photoelectric conversion sections being connected to the driving circuits, and
(e) respective second pixel electrodes between the first pixel electrodes and the photoelectric conversion sections, each second pixel electrode being in contact with a respective first pixel electrode and being spaced from the interlayer dielectric film, each second pixel electrode covering a whole surface of the respective photoelectric conversion section wherein each of the first pixel electrodes is smaller in plan view than the respective photoelectric conversion section.

Assignees

• Ohta Kazuo
• Yoshihara Ikuo
• Sony Corp

Inventors

• Ohta Kazuo
• Yoshihara Ikuo

Classifications

• H10D86/0214

  using temporary substrates · CPC title

• H10F39/8063

  Microlenses · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/026

  Wafer-level processing · CPC title