Thin film deposition apparatus

Patent metadata

Field	Value
Publication number	US-9269564-B2
Application number	US-201213682520-A
Country	US
Kind code	B2
Filing date	Nov 20, 2012
Priority date	Jan 26, 2012
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

A thin film deposition apparatus includes a reaction chamber, a main disk installed in the reaction chamber, and a gas discharging unit disposed outside the main disk. The gas discharging unit recollects a gas in the reaction chamber, and includes: a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, and is ring-shaped with an open upper portion. At least one through hole is formed in the lower wall. A discharge sleeve is configured to be inserted into the through hole, wherein a gas outlet is formed in the discharge sleeve. An upper cover that is ring-shaped covers the open upper portion of the base member. A plurality of gas inlets are formed in the upper cover.

First claim

What is claimed is:

1. A thin film deposition apparatus comprising:
a reaction chamber;
a main disk installed in the reaction chamber; and
a gas discharging unit that is disposed outside the main disk and is configured to recollect a gas in the reaction chamber,
wherein the gas discharging unit comprises:
a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, wherein the base member comprises a ring-shaped member including an open upper portion, and at least one through hole is disposed in the lower wall;
a discharge sleeve that is inserted into the at least one through hole, wherein a gas outlet is formed in the discharge sleeve; and
an upper cover comprising a ring-shaped member covering the open upper portion of the base member, wherein a plurality of gas inlets are formed in the upper cover.

2. The thin film deposition apparatus of claim 1 , wherein the discharge sleeve of the gas discharging unit comprises an inserting portion configured to be inserted into the at least one through hole, and a wing portion extending from the inserting portion.

3. The thin film deposition apparatus of claim 1 , wherein the upper cover of the gas discharging unit comprises a plurality of upper cover fragments that are disposed in a circumferential direction.

4. The thin film deposition apparatus of claim 3 , wherein an insulating material is interposed between the plurality of upper cover fragments.

5. The thin film deposition apparatus of claim 3 , wherein the plurality of upper cover fragments comprises graphite, and a coating layer of a silicon carbide is disposed on surfaces of the plurality of upper cover fragments.

6. The thin film deposition apparatus of claim 1 , further comprising:
a diffusion barrier disposed below the main disk and configured to prevent diffusion of a gas to an area below the main disk; and
a diffusion barrier cover disposed outside the main disk and configured to cover an upper surface of the diffusion barrier, wherein the diffusion barrier cover comprises graphite.

7. The thin film deposition apparatus of claim 6 , wherein the diffusion barrier cover comprises a plurality of diffusion barrier cover fragments that are disposed in a circumferential direction, and
an insulating material is interposed between the diffusion barrier cover fragments.

8. The thin film deposition apparatus of claim 7 , wherein a silicon carbide coating layer is disposed on surfaces of the plurality of diffusion barrier cover fragments.

9. The thin film deposition apparatus of claim 6 , wherein the diffusion barrier cover is integral with the upper cover, and the diffusion barrier cover comprises a cover portion covering the open upper portion of the base member and comprising a gas inlet and a barrier portion that covers an upper surface of the diffusion barrier.

10. The thin film deposition apparatus of claim 1 , further comprising:
a housing comprising a lower housing in the form of a concave container with an open upper portion and a cover portion covering the open upper portion, wherein the housing surrounds the reaction chamber;
a sidewall member that is disposed in the housing to form a sidewall of the reaction chamber, wherein the sidewall member is supported by an outer sidewall of the base member and extends upwardly; and
an upper sealing member that is coupled to the cover portion and is adhered to the sidewall member to form an upper wall of the reaction chamber.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Han Kyung-Don
• Cho Jeen-Seok

Classifications

• H10P14/00 Primary

  Formation of materials, e.g. in the shape of layers or pillars · CPC title

• C23C16/4404 Primary

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• H01L21/02104 Primary

  Electricity · mapped topic