System and method for an improved fine pitch joint

Patent metadata

Field	Value
Publication number	US-9263839-B2
Application number	US-201313751289-A
Country	US
Kind code	B2
Filing date	Jan 28, 2013
Priority date	Dec 28, 2012
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

Presented herein are an interconnect and method for forming the same, the method comprising forming an interconnect on a mounting surface of a mounting pad disposed on a first surface of a first substrate, the interconnect comprising a conductive material, optionally solder or metal, the interconnect avoiding the sides of the mounting pad. A molding compound is applied to the first surface of the first substrate and molded around the interconnect to covering at least a lower portion of the interconnect and a second substrate may be mounted on the interconnect. The interconnect may comprise an interconnect material disposed between a first and second substrate and a molding compound disposed on a surface of the first substrate, and exposing a portion of the interconnect. A sidewall of the interconnect material contacts the mounting pad at an angle less than about 30 degrees from a plane perpendicular to the first substrate.

First claim

What is claimed is:

1. A method of forming an interconnect, comprising:
forming an interconnect on a mounting surface of a mounting pad disposed on a first surface of a first substrate, the forming the interconnect further comprising:
applying a flux on the mounting surface of the mounting pad;
applying a metal ball to the flux, the metal ball having a first height and a first width; and
heating the metal ball in a convection environment;

forming a molding compound around the interconnect, the molding compound covering at least a lower portion of the interconnect, at least a portion of the interconnect being exposed, wherein before the forming the molding compound, the metal ball has the first height and the first width, and wherein after the forming the molding compound, the metal ball has the first height and the first width; and
reflowing the interconnect, wherein after the reflowing, the metal ball of the interconnect has the first height and the first width, the first height being about equal to the first width, wherein the flux, the convection heating environment, and the molding compound are utilized to control the first height and the first width of the metal ball of the interconnect.

2. The method of claim 1 , wherein forming the interconnect further comprises applying the metal ball with a sidewall of the metal ball contacting the mounting pad at an angle less than about 20 degrees from a plane perpendicular to the mounting surface of the mounting pad.

3. The method of claim 1 , further comprising mounting a second substrate on the interconnect by activating the interconnect, a land of the second substrate disposed on the interconnect.

4. The method of claim 3 , wherein activating the interconnect comprises reflowing the metal ball.

5. The method of claim 1 , wherein forming the molding compound comprises using a mold to form the molding compound around the interconnect.

6. A method of forming an interconnect, comprising:
applying a flux on a mounting surface of a mounting pad disposed on a first surface of a first substrate;
applying a metal ball on the flux;
heating the metal ball in a convection environment;
forming a molding compound around the interconnect, the molding compound exposing an upper portion of the metal ball, wherein before the forming the molding compound, the metal ball has a first height and a first width, and wherein after the forming the molding compound, the metal ball has the first height and the first width; and
reflowing the metal ball, wherein after the reflowing, the metal ball has the first height and the first width, the first height being about equal to the first width, wherein the flux, the convection heating environment, and the molding compound are utilized to control the first height and the first width of the metal ball.

7. The method of claim 6 , wherein forming the interconnect further comprises applying the metal ball with a sidewall of the metal ball contacting the mounting pad at an angle less than about 30 degrees from a plane perpendicular to the mounting surface of the mounting pad.

8. The method of claim 7 , wherein forming the interconnect further comprises applying the metal ball with a sidewall of the metal ball contacting the mounting pad at an angle less than about 20 degrees from the plane perpendicular to the mounting surface of the mounting pad.

9. The method of claim 6 , wherein forming the molding compound comprises using a mold to form the molding compound around the interconnect, the mold having a release compound disposed therein, the release compound in contact with the molding compound during forming the molding compound.

10. The method of claim 9 , further comprising plasma cleaning the metal ball after forming the molding compound.

11. A method comprising:
forming a mounting pad over a first substrate;
forming a conductive interconnect on a mounting surface of the mounting pad, a sidewall of the conductive interconnect contacting the mounting pad at a sidewall angle, the sidewall angle being less than about 20 degrees from a plane perpendicular to the mounting surface of the mounting pad, the forming the conductive interconnect further comprises:
applying a flux on the mounting surface of the mounting pad;
applying a metal ball to the flux; and
heating the metal ball in a convection environment to form the conductive interconnect;

forming a molding compound around the conductive interconnect, the molding compound covering at least a lower portion of the conductive interconnect, at least a portion of the conductive interconnect being exposed through the molding compound, wherein the flux, the convection heating environment, and the molding compound are utilized to control the sidewall angle of the conductive interconnect; and
bonding a second substrate to the conductive interconnect, the second substrate being separated from a top surface of the molding compound by a first distance measured in a direction perpendicular to a major surface of the second substrate.

12. The method of claim 11 , wherein the top surface of the molding compound adjoining and surrounding the conductive interconnect is a concave top surface.

13. The method of claim 11 , wherein the first distance is less than or equal to about 140 μm.

14. The method of claim 11 , wherein the molding compound contacts the mounting surface and sidewalls of the mounting pad.

15. The method of claim 11 further comprising:
forming a conductive trace over the first substrate;
forming a passivation layer over the first substrate and partially over a top surface of the conductive trace; and
forming a polymer layer over the passivation layer, the polymer layer contacting the top surface of the conductive trace, the mounting pad extending through the polymer layer to contact the conductive trace.

16. The method of claim 11 , wherein a height of the metal ball is between about 240 μm and about 260 μm and a width of the metal ball is between about 240 μm and about 260 μm.

17. The method of claim 11 , wherein the metal ball has a height about equal to a width of the metal ball.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Chen Cheng-Ting
• Lu Wen-Hsiung
• Cheng Ming-Da
• Liu Chung-Shi
• Lii Mirng-Ji

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title