Photodetector using graphene and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9263607-B2
Application number	US-201313747920-A
Country	US
Kind code	B2
Filing date	Jan 23, 2013
Priority date	Apr 27, 2012
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have π-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have π-binding.

First claim

What is claimed is:

1. A photodetector comprising:
a gate electrode;
a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have π-binding;
a first electrode which contacts a first side of the graphene channel layer; and
a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other,
wherein the graphene channel layer comprises:
a first graphene layer; and
a first nanoparticle disposed on the first graphene layer.

2. The photodetector of claim 1 , wherein the first graphene layer comprises a single graphene layer.

3. The photodetector of claim 1 , wherein the first graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the π-binding.

4. The photodetector of claim 3 , further comprising a second nanoparticle between the plurality of graphene layers.

5. The photodetector of claim 1 , wherein the graphene channel layer further comprises a second graphene layer which covers the first nanoparticle on the first graphene layer.

6. The photodetector of claim 4 , wherein the first nanoparticle and the second nanoparticle are the same as or different from each other.

7. The photodetector of claim 5 , wherein the second graphene layer comprises a single graphene layer.

8. The photodetector of claim 5 , wherein the second graphene layer comprises a plurality of graphene layers, which is sequentially stacked and does not have the π-binding.

9. The photodetector of claim 8 , further comprising a third nanoparticle between the plurality of graphene layers in the second graphene layer.

10. The photodetector of claim 9 , wherein the first nanoparticle and the third nanoparticle are the same as or different from each other.

11. The photodetector of claim 1 , wherein the first and second electrodes comprise a same material.

12. The photodetector of claim 1 , wherein the gate electrode comprises a P-type or N-type silicon electrode.

13. The photodetector of claim 1 , wherein the first nanoparticle comprises gold (Au) or silver (Ag).

14. The photodetector of claim 1 , wherein the gate electrode is disposed above or under the graphene channel layer.

15. A method of manufacturing a photodetector, the method comprising:
providing a graphene channel layer;
providing a gate electrode opposite to the graphene channel layer;
providing a first electrode which is spaced apart from the gate electrode and contacts a first side of the graphene channel layer; and
providing a second electrode which is spaced apart from the gate electrode and contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other,
wherein the providing the graphene channel layer comprises:
providing a first graphene layer which does not have π-binding; and
providing a first nanoparticle on the first graphene layer.

16. The method of claim 15 , wherein the gate electrode is provided above or under the graphene channel layer.

17. The method of claim 15 , wherein the providing the first graphene layer comprises:
forming a single graphene layer; and
transferring the formed single graphene layer to a location where the graphene channel layer is to be provided.

18. The method of claim 15 , wherein the providing the first graphene layer comprises:
forming a first single graphene layer;
transferring the formed first single graphene layer to a location where the graphene channel layer is to be provided;
forming a second single graphene layer; and
transferring the formed second single graphene layer onto the first single graphene layer.

19. The method of claim 18 , wherein the providing the first graphene layer further comprises:
providing a second nanoparticle on the formed first single graphene layer before the transferring the formed second single graphene layer onto the first single graphene layer.

20. The method of claim 15 , wherein the providing the graphene channel layer further comprises providing a second graphene layer which covers the first nanoparticle on the first graphene layer.

21. The method of claim 19 , wherein the first nanoparticle and the second nanoparticle are the same as or different from each other.

22. The method of claim 20 , wherein the providing the second graphene layer comprises:
forming a third single graphene layer; and
transferring the formed third single graphene layer onto the first graphene layer to cover the first nanoparticle.

23. The method of claim 20 , wherein the providing the second graphene layer comprises:
forming a fourth single graphene layer;
transferring the formed fourth single graphene layer onto the first graphene layer to cover the first nanoparticle;
forming a fifth single graphene layer; and
transferring the formed fifth single graphene layer onto the fourth single graphene layer.

24. The method of claim 23 , wherein the providing the second graphene layer further comprises:
providing a third nanoparticle on the fourth single graphene layer before the transferring the formed fifth single graphene layer onto the fourth single graphene layer.

25. The method of claim 24 , wherein the first nanoparticle and the third nanoparticle are the same as or different from each other.

26. The method of claim 18 , wherein a single graphene layer is further provided on the second single graphene layer.

27. The method of claim 20 , wherein the providing the graphene channel layer further comprises:
providing a third nanoparticle on the second graphene layer; and
providing a graphene layer which covers the third nanoparticle on the second graphene layer.

28. The method of claim 23 , further comprising:
providing a single graphene layer on the fifth single graphene layer.

29. The method of claim 15 , wherein the providing the first nanoparticle on the first graphene layer comprises:
forming a metal layer to form the first nanoparticle on the first graphene layer; and
annealing the metal layer.

30. The method of claim 15 , wherein the first nanoparticle comprises gold (Au) or silver (Ag).

31. The method of claim 15 , wherein the first and second electrodes comprise a same material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoo Won Jong
• Li Hua-Min

Classifications

• H10F30/282

  Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors · CPC title

• H10F77/143

  comprising quantum structures · CPC title

• H10F30/10 Primary

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/40

  Optical elements or arrangements (surface textures H10F77/70) · CPC title