Etching method using block-copolymers

Patent metadata

Field	Value
Publication number	US-9263288-B2
Application number	US-201314074460-A
Country	US
Kind code	B2
Filing date	Nov 7, 2013
Priority date	Nov 14, 2012
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H 2 .

First claim

The invention claimed is:

1. A method for block-copolymer lithography, the method comprising:
forming, a pre-mask layer on a substrate, a pre-mask pattern that includes a plurality of ridges and valleys, wherein the pre-mask layer and the substrate are different materials, wherein the plurality of ridges and valleys comprise a plurality of guides for aligning a copolymer pattern structure;
subsequent to forming the pre-mask pattern, forming a neutral layer on the substrate, wher…

Assignees

• Imec
• Tokyo Electron Ltd

Inventors

• Chan Boon Teik
• Tahara Shigeru

Classifications

• H10P76/20

  Electricity · mapped topic

• H10P50/696

  Electricity · mapped topic

• H10P50/692

  Electricity · mapped topic

• H10P50/242

  Electricity · mapped topic

• H10P50/695 Primary

  Electricity · mapped topic