Voltage regulator, memory controller and voltage supplying method thereof

Patent metadata

Field	Value
Publication number	US-9263098-B2
Application number	US-201414504911-A
Country	US
Kind code	B2
Filing date	Oct 2, 2014
Priority date	Dec 11, 2013
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A memory controller of inventive concepts may include an active regulator configured to operate in an active mode and be inactive in a sleep mode, an active logic configured to receive a drive voltage, a power gating switch configured to connect the active regulator to the active logic after a transient state of the active mode, the transient state being an initial time period of the active mode, and a charging circuit configured to charge the active logic during the transient state.

First claim

What is claimed is:

1. A memory controller of a memory card comprising:
an active regulator configured to operate in an active mode and be inactive in a sleep mode;
an active logic configured to receive a drive voltage;
a power gating switch configured to connect the active regulator to the active logic after a transient state of the active mode, the transient state being an initial time period of the active mode; and
a charging circuit configured to charge the active logic during the transient state.

2. The memory controller of claim 1 , wherein the charging circuit is configured to charge the active logic until a voltage of a power input terminal of the active logic reaches a reference voltage.

3. The memory controller of claim 2 , wherein the transient state starts if the active mode begins, and the transient state ends if the voltage of the power input terminal reaches the reference voltage.

4. The memory controller of claim 1 , wherein the memory controller is configured to close the power gating switch if the charging circuit is inactive.

5. The memory controller of claim 2 , wherein the charging circuit comprises:
a programmable logic circuit for setting a level of the reference voltage or an amplitude of a charging current from the charging circuit.

6. The memory controller of claim 1 , further comprising:
a sleep regulator configured to operate in the sleep mode and in the active mode, the sleep regulator configured to generate a sleep voltage; and
a sleep logic configured to operate based on the sleep voltage.

7. The memory controller of claim 1 , further comprising:
a power gate control logic configured to open the power gating switch during the transient state and to close the power gating switch in response to the charging circuit.

8. The memory controller of claim 1 , wherein the charging circuit comprises:
a switch control logic configured to open the power gating switch during the transient state and to close the power gating switch based on a voltage of a power input terminal of the active logic.

9. A voltage regulator of a semiconductor device comprising:
a first regulator configured to operate in an active mode and be inactive in a sleep mode;
a second regulator configured to operate in the sleep mode and the active mode, the second regulator configured to generate a sleep voltage, the second regulator and the first regulator having a common output terminal;
an active logic configured to receive a drive voltage;
a sleep logic configured to operate based on the sleep voltage, the sleep voltage and the drive voltage having a same voltage level;
a power gating switch configured to connect the common output terminal to a power input terminal of the active logic based on a state of the active mode; and
a charging circuit configured to charge the power input terminal to a reference voltage during a transient state of the active mode, the transient state being an initial time period of the active mode.

10. The voltage regulator of claim 9 , wherein the voltage regulator is configured to deactivate the charging circuit if the power input terminal has reached the reference voltage.

11. The voltage regulator of claim 10 , wherein the voltage regulator is configured to open the power gating switch if the charging circuit is inactive.

12. The voltage regulator of claim 9 , wherein the charging circuit comprises:
a current source configured to generate a charging current for charging the power input terminal;
a charging switch configured to connect the current source to the power input terminal; and
a comparator configured to close the charging switch during the transient state and to open the charging switch based on a reference voltage and a voltage of the power input terminal.

13. The voltage regulator of claim 12 , wherein the charging circuit is configured to open the charging switch if the voltage of the power input terminal increases above the reference voltage.

14. The voltage regulator of claim 12 , wherein the current source comprises:
a programmable variable current source configured to change an amplitude of a charging current for the active logic.

15. The voltage regulator of claim 12 , wherein the voltage regulator is configured to change the reference voltage.

16. A memory controller comprising:
an active logic configured to operate based on a drive voltage, the active logic configured to control an external memory device;
a sleep logic configured to operate based on a sleep voltage, the sleep logic configured to detect a change of an operation mode of the memory controller; and
a voltage regulator including,
a charging circuit configured to supply the drive voltage to the active logic based on the detected change, and
an active regulator configured to supply the drive voltage to the active logic if the drive voltage is greater than a reference voltage.

17. The memory controller of claim 16 , wherein the charging circuit includes a charging switch configured to disconnect the charging circuit from the active logic based on the drive voltage and the reference voltage.

18. The memory controller of claim 17 , further comprising:
a power gating switch configured to connect the active regulator to the active logic based on a status of the charging switch.

19. The memory controller of claim 18 , wherein the power gating switch is is configured to close if the charging switch is opened.

20. The memory controller of claim 19 , wherein the power gating switch is configured to open if the charging switch is closed.

Assignees

• Yoo Sungmin
• Kim Dae-Yong
• Kim Juhwa
• Samsung Electronics Co Ltd

Inventors

• Yoo Sungmin
• Kim Dae-Yong
• Kim Juhwa

Classifications

• H02M3/158

  including plural semiconductor devices as final control devices for a single load · CPC title

• G11C5/148

  Details of power up or power down circuits, standby circuits or recovery circuits · CPC title

• G11C5/147 Primary

  Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

• G11C5/14 Primary

  Power supply arrangements {, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels} · CPC title