Method and apparatus for integrated circuit design

Patent metadata

Field	Value
Publication number	US-9262820-B2
Application number	US-201414281881-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	May 19, 2014
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

A method for IC design is provided. Firstly, an IC design layout having a main feature with an original margin is received. Then, a first modified margin of the main feature is generated; and a first photolithography simulation procedure of the main feature with the first modified margin is performed to generate a first contour having a plurality of curves. Next, an equation of each of the curves is obtained; each equation of the curves is manipulated to obtain a vertex of each of the curves. After that, a first group of target points are assigned to the original margin. Each of the first group of target points respectively corresponds to one of the vertices. Finally, an optical proximity correction (OPC) procedure is performed by using the first group of target points to generate a second modified margin. An apparatus for IC design is also provided.

First claim

What is claimed is:

1. A method for integrated circuit (IC) design, comprising steps of:
receiving an IC design layout having a main feature with an original margin;
generating a first modified margin of said main feature;
performing a first photolithography simulation procedure of said main feature with said first modified margin by using a processor to generate a first contour having a plurality of curves;
obtaining an equation of each of said curves, each of said equations is expressed as a Taylor series;
manipulating each of said equations of said curves by using said processor to obtain a vertex of each of said curves of said first contour;
assigning a first group of target points to said original margin of said main feature, wherein said first group of target points comprising a plurality of target points, each target point of said first group of target points respectively corresponds to one of said vertices;
performing an optical proximity correction (OPC) procedure by using said first group of target points to generate a second modified margin;

wherein said step of generating said first modified margin of said main feature comprises:
dissecting said original margin of said main feature into a plurality of segments, wherein said curves respectively correspond to one of said segments;
assigning a second group of target points to said original margin of said main feature, the second group of target points comprising a plurality of target points; and
performing an another OPC procedure by using said second group of target points to generate said first modified margin;

wherein image errors are compensated for fabricated IC structures by modifying IC design layout structures for enabling photomask fabrication so that a higher fidelity IC main feature is obtained, wherein a second contour is closer to the first group of target points than the first contour, and the second modified margin is structurally different from the first modified margin.

2. An apparatus for integrated circuit (IC) design, comprising:
a processor;
a receiving module, communicatively coupled to said processor and configured to receive an IC design layout having a main feature with an original margin; and
a non-transitory computer-readable storage, communicatively coupled to said processor and comprising instructions executable by said processor, said instructions comprising:
instructions to generate a first modified margin of said main feature;
instructions to perform a first photolithography simulation procedure of said main feature with said first modified margin to generate a first contour having a plurality of curves;

instructions to obtain an equation of each of said curves, wherein each said equation is expressed as a Taylor series;
instructions to manipulate each said equation of said curves to obtain a vertex of each of said curves;
instructions to assign a first group of target points to said original margin of said main feature, wherein each of said first group of target points respectively corresponds to one of said vertices; and
instructions to perform an optical proximity correction (OPC) procedure by using said group of target points to generate a second modified margin;

wherein said instructions of generating said first modified margin of said main feature comprises:
instructions to dissect said original margin of said main feature into a plurality of segments;
instructions to assign a second group of target points to said original margin of said main feature; and
instructions to perform an another OPC procedure by using said second group of target points to generate said first modified margin;

wherein image errors are compensated for fabricated IC structures by modifying IC design layout structures for enabling photomask fabrication so that a higher fidelity IC main feature is obtained, wherein a second contour is closer to the first group of target points than the first contour, and the second modified margin is structurally different from the first modified margin.

3. The method according to claim 1 , wherein each equation expressed as said Taylor series is defined by a plurality of points of each of said curves.

4. The method according to claim 3 , wherein said points of each of said curves comprise said vertex thereof.

5. The method according to claim 1 , wherein said step of manipulating each said equation comprises:
obtaining a first derivative by performing differentiation on each said equation; and
setting each said first derivative equal to zero to obtain a value of a variable at each said vertex.

6. The method according to claim 5 , wherein a value of said variable at one target point of said first group of target points is equal to said value of said variable at said vertex corresponding to said target point.

7. The method according to claim 1 , further comprising steps of:
performing a second photolithography simulation procedure of said second modified margin by using said processor to generate said second contour; and
performing an OPC evaluation procedure to determine if said second contour meets said first group of target points.

8. The method according to claim 7 , further comprising a step of outputting said IC design layout having said main feature with said second modified margin if said second contour meets said first group of target points.

9. The method according to claim 1 , wherein said step of performing said OPC procedure comprises performing a convergence process repeatedly.

10. The apparatus according to claim 2 , wherein said instructions to manipulate each said equation comprise:
instructions to obtain a first derivative by performing differentiation on each said equation; and
instructions to let each said first derivative equal to zero to obtain a value of a variable at each said vertex.

11. The apparatus according to claim 2 , wherein said instructions further comprise:
instructions to perform a second photolithography simulation procedure of said second modified margin to generate said second contour; and
instructions to perform an OPC evaluation procedure to determine if said second contour meets said first group of target points.

12. The apparatus according to claim 11 , wherein said instructions further comprise instructions to output said IC design layout having said main feature with said second modified margin if said second contour meets said first group of target points.

13. The apparatus according to claim 2 , wherein said instructions to perform said OPC procedure comprise instructions to perform a convergence process repeatedly.

Assignees

• United Microelectronics Corp

Inventors

• Hsieh Te-Hsien
• Chen Ming-Jui
• Wang Cheng-Te
• Lee Jing-Yi

Classifications

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G06T7/0004 Primary

  Industrial image inspection · CPC title

• G06K9/52

  Physics · mapped topic

• G03F7/70441

  Optical proximity correction [OPC] · CPC title