PoP structures including through-assembly via modules

Patent metadata

Field	Value
Publication number	US-9258922-B2
Application number	US-201213352937-A
Country	US
Kind code	B2
Filing date	Jan 18, 2012
Priority date	Jan 18, 2012
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A device includes a Through-Assembly Via (TAV) Module, which includes a substrate, a plurality of through-vias penetrating through the substrate, and a second plurality of metal posts at a bottom surface of the TAV module and electrically coupled to the plurality of through-vias. A polymer includes a first portion between and contacting sidewalls of the first package component and the TAV module, a second portion disposed between the first plurality of metal posts, and a third portion disposed between the second plurality of metal posts. A first plurality of Redistribution Lines (RDLs) is underlying a bottom surface of the second and the third portions of the polymer. A second plurality of RDLs is over the first package component and the TAV module. The first plurality of RDLs is electrically coupled to the second plurality of RDLs through the plurality of through-vias in the TAV module.

First claim

What is claimed is:

1. A device comprising:
a first package component;
a first plurality of metal posts at a bottom surface of the first package component and electrically coupled to the first package component;
a Through-Assembly Via (TAV) Module comprising:
a substrate;
a strip-shaped via in the substrate, wherein the strip-shaped via is electrically floating;
a plurality of through-vias penetrating through the substrate, wherein each of the plurality of through-vias comprises a straight sidewall extending from a top surface to a bottom surface of the substrate; and
a second plurality of metal posts at a bottom surface of the TAV module and electrically coupled to the plurality of through-vias;

a polymer comprising:
a first portion between and contacting sidewalls of the first package component and the TAV module;
a second portion disposed between the first plurality of metal posts; and
a third portion disposed between the second plurality of metal posts;

a first plurality of Redistribution Lines (RDLs) underlying a bottom surface of the second and the third portions of the polymer; and
a second plurality of RDLs over the first package component and the TAV module, wherein the first plurality of RDLs is electrically coupled to the second plurality of RDLs through the plurality of through-vias in the TAV module.

2. The device of claim 1 , wherein the first package component comprises a semiconductor substrate having a top surface level with the top surface of the substrate of the TAV module.

3. The device of claim 2 further comprising a dielectric layer over and contacting the top surface of the semiconductor substrate of the first package component, the top surface of the substrate of the TAV module, and the first portion of the polymer.

4. The device of claim 1 , wherein the TAV module is free from active devices therein.

5. The device of claim 1 , wherein the substrate of the TAV module is a dielectric substrate.

6. The device of claim 1 , wherein the plurality of through-vias further comprises:
a first plurality of through-vias interconnected to form a first capacitor plate of a capacitor; and
a second plurality of through-vias interconnected to form a second capacitor plate of the capacitor.

7. A device comprising:
a bottom package comprising:
a package substrate;
a plurality of connectors over the package substrate;
a package comprising:
a device die;
a Through-Assembly Via (TAV) module substantially level with the device die, wherein the TAV module is free from active devices therein, and wherein the TAV module comprises a substrate and a plurality of through-vias penetrating through the substrate, wherein the plurality of through-vias comprises strip-shaped vias, with alternating ones of the strip-shaped vias interconnected to form capacitor plates of a capacitor; and
a molding compound contacting a bottom surface of the device die, a bottom surface of the TAV module, and sidewalls of the device die and the TAV module; and

a first plurality of Redistribution Lines (RDLs) under the molding compound and electrically coupled to the device die and the plurality of through-vias in the TAV module, wherein the first plurality of RDLs is bonded to the package substrate through the plurality of connectors; and

a top package component bonded to the bottom package.

8. The device of claim 7 , wherein the package in the bottom package further comprises:
a dielectric layer contacting a top surface of the device die and a top surface of the TAV module; and
a second plurality of RDLs over the dielectric layer and coupled to the plurality of through-vias in the TAV module, wherein the second plurality of RDLs is bonded to the top package component.

9. The device of claim 8 , wherein the top surface of the device die is level with the top surface of the TAV module.

10. The device of claim 7 , wherein each of the plurality of through-vias comprises a straight sidewall extending from a top surface to a bottom surface of the substrate.

11. The device of claim 7 further comprising an additional TAV module level with the TAV module, wherein the additional TAV module is spaced apart from the TAV module by a portion of the molding compound.

12. The device of claim 7 , wherein the substrate of the TAV module is a dielectric substrate.

13. The device of claim 7 , wherein one of the plurality of through-vias is electrically floating.

14. A device comprising:
a package comprising:
a device die;
a Through-Assembly Via (TAV) module free from active devices and passive devices therein, wherein the TAV module comprises a first substrate and a plurality of through-vias penetrating through the first substrate, wherein the plurality of through-vias further comprises:
a first plurality of through-vias interconnected to form a first capacitor plate of a capacitor; and
a second plurality of through-vias interconnected to form a second capacitor plate of the capacitor; and

a molding compound encircling each of the device die and the TAV module; and

a first plurality of Redistribution Lines (RDLs) and a second plurality of RDLs electrically coupled to the plurality of through-vias, wherein the first plurality of RDLs and the second plurality of RDLs are on opposite sides of the plurality of through-vias.

15. The device of claim 14 , wherein the molding compound comprises a first surface coplanar with a second surface of the first substrate and a third surface of a second substrate of the device die.

16. The device of claim 15 , wherein the molding compound comprises a fourth surface opposite to the first surface, wherein the fourth surface is coplanar with surfaces of the plurality of through-vias, and the device die comprises a plurality of metal posts comprising surfaces coplanar with the fourth surface of the molding compound.

17. The device of claim 15 , wherein each of the first substrate and the second substrate is a semiconductor substrate.

18. The device of claim 15 further comprising a polymer layer contacting the first surface of the molding compound, wherein the plurality of through-vias penetrates through the polymer layer.

Assignees

• Chen Chih-Hua
• Chen Chen-Shien
• Hsiao Ching-Wen
• Taiwan Semiconductor Mfg

Inventors

• Chen Chih-Hua
• Chen Chen-Shien
• Hsiao Ching-Wen

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title