Magnetic recording device and magnetic recording apparatus

Patent metadata

Field	Value
Publication number	US-9257168-B2
Application number	US-201314078228-A
Country	US
Kind code	B2
Filing date	Nov 12, 2013
Priority date	Jul 11, 2007
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.

First claim

We claim:

1. A magnetic recording device comprising:
a magnetic recording section;
a magnetization oscillator overlapping the magnetic recording section in a stacking direction; and
a first nonmagnetic layer provided between the magnetic recording section and the magnetization oscillator,
the magnetic recording section including:
a first ferromagnetic layer having a first magnetization;
a second ferromagnetic layer overlapping the first ferromagnetic layer in the stacking direction, the second ferromagnetic layer having a second magnetization; and
a second nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,

the magnetization oscillator including:
a third ferromagnetic layer having a third magnetization;
a fourth ferromagnetic layer overlapping the third ferromagnetic layer in the stacking direction, the fourth ferromagnetic layer having a fourth magnetization; and
a third nonmagnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer, wherein

the third ferromagnetic layer generates a radio-frequency magnetic field depending on a current passing through the first ferromagnetic layer, the second ferromagnetic layer, the second nonmagnetic layer, the third ferromagnetic layer, the fourth ferromagnetic layer, the third nonmagnetic layer and the first nonmagnetic layer in the stacking direction,
the radio-frequency magnetic field is applied to the second ferromagnetic layer, and
a direction of the second magnetization changes in response to a direction of the current.

2. The device according to claim 1 , wherein the third magnetization is able to undergo precession by the current.

3. The device according to claim 1 , wherein
the second nonmagnetic layer includes at least one selected from the group consisting of ruthenium (Ru), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), and vanadium (V), or an alloy containing at least one element selected from the group consisting of ruthenium (Ru), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), niobium (Nb), airconium (Zr), titanium (Ti), and banadium (V), and
the second nonmagnetic layer has a thickness of 1.4 nm or more and 20 nm or less.

4. The device according to claim 1 , wherein the second nonmagnetic layer includes an electrically insulative material.

5. The device according to claim 1 , wherein the second nonmagnetic layer includes
a single layer, the single layer including at least one selected from the group consisting of ruthenium (Ru), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), and vanadium (V).

6. The device according to claim 5 , wherein the single layer includes an alloy containing at least one element selected from the group consisting of ruthenium (Ru), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), and vanadium (V).

7. The device according to claim 5 , wherein the second nonmagnetic layer further includes a copper (Cu) layer provided on one side or both sides of the single layer.

8. The device according to claim 5 , wherein the second nonmagnetic layer further includes an oxide layer provided on one side or both sides of the single layer, and the oxide layer contains at least one element selected from the group consisting of aluminum (Al), magnesium (Mg), titanium (Ti), iron (Fe), cobalt (Co), nickel (Ni), vanadium (V), chromium (Cr), tantalum (Ta), tungsten (W), and ruthenium (Ru).

9. The device according to claim 1 , wherein a direction of the first magnetization is substantially fixed in a first direction.

10. The device according to claim 9 , wherein a direction of the fourth magnetization is substantially fixed in a second direction.

11. The device according to claim 10 , wherein
the first direction is generally perpendicular to the stacking direction, and
the second direction is generally parallel to the stacking direction.

12. The device according to claim 10 , wherein
the first direction is generally parallel to the stacking direction, and
the second direction is generally parallel to the stacking direction.

13. A magnetic recording device comprising:
a body including
a first ferromagnetic layer having a first magnetization,
a second ferromagnetic layer overlapping with the first ferromagnetic layer in a stacking direction, the second ferromagnetic layer having a second magnetization, and
a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer; and

a third ferromagnetic layer overlapping the body in the stacking direction, the third ferromagnetic layer having a third magnetization, and
a second nonmagnetic layer provided between the body and the third ferromagnetic layer, wherein
the third ferromagnetic layer generates a radio-frequency magnetic field depending on a current passing through the first ferromagnetic layer, the second ferromagnetic layer, the first nonmagnetic layer and the second nonmagnetic layer in the stacking direction,
the radio-frequency magnetic field is applied to the second ferromagnetic layer, and
a direction of the second magnetization changes in response to a direction of the current.

14. The device according to claim 13 , wherein the first nonmagnetic layer includes an electrically insulative material.

15. The device according to claim 13 , wherein the third magnetization is able to undergo precession by thermal excitation.

16. The device according to claim 13 , wherein a direction of the first magnetization is substantially fixed in a first direction.

Assignees

• Toshiba Kk

Inventors

• Nakamura Shiho
• Morise Hirofumi
• Yanagi Satoshi
• Saida Daisuke
• Kikitsu Akira

Classifications

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• G11C11/22 Primary

  using ferroelectric elements · CPC title

• G11B5/66

  the record carriers consisting of several layers · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title