Bismuth-doped semi-insulating group III nitride wafer and its production method

Patent metadata

Field	Value
Publication number	US-9255342-B2
Application number	US-201313781543-A
Country	US
Kind code	B2
Filing date	Feb 28, 2013
Priority date	Apr 7, 2006
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

The present invention discloses a semi-insulating wafer of Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 10 4 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 10 5 cm −2 . The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

First claim

What is claimed is:

1. A semi-insulating wafer comprising crystalline Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) having a surface area more than 10 mm 2 and thickness more than 200 microns wherein the crystalline Ga x Al y In 1-x-y N is doped with a sufficient amount of bismuth to make the wafer semi-insulating.

2. The semi-insulating wafer of claim 1 wherein a resistivity of the wafer is greater than 10 4 ohm-cm.

3. The semi-insulating wafer of claim 1 wherein the wafer is fabricated by slicing a bulk ingot of Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) grown in supercritical ammonia.

4. The semi-insulating wafer of claim 1 wherein the wafer comprises highly-oriented poly or single crystalline Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) with a density of line defects and grain boundaries less than 10 5 cm −2 .

5. The semi-insulating wafer of claim 1 wherein the wafer is GaN.

6. The semi-insulating wafer of claim 1 in which the Ga x Al y In 1-x-y N doped with bismuth has a resistivity greater than about 10 4 ohm-cm.

7. The semi-insulating wafer of claim 1 wherein the Ga x Al y In 1-x-y N doped with bismuth has a density of dislocations and/or grain boundaries of less than 10 5 cm −2 .

8. The semi-insulating wafer of claim 1 wherein the Ga x Al y In 1-x-y N doped with bismuth is a layer upon a group III-nitride substrate.

9. The semi-insulating wafer of claim 1 wherein the wafer comprises, throughout the wafer, Ga x Al y In 1-x-y N doped with bismuth.

10. An electronic, optical, or opto-electronic device formed on the semi-insulating wafer of claim 1 .

11. The semi-insulating wafer of claim 6 wherein the Ga x Al y In 1-x-y N doped with bismuth has a density of line defects and/or grain boundaries of less than 10 5 cm −2 .

12. The semi-insulating wafer of claim 11 wherein the Ga x Al y In 1-x-y N doped with bismuth is fabricated by slicing a bulk ingot of Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) grown in supercritical ammonia.

13. The semi-insulating wafer of claim 12 wherein the Ga x Al y In 1-x-y N doped with bismuth is GaN doped with bismuth.

14. The semi-insulating wafer of claim 11 wherein the Ga x Al y In 1-x-y N doped with bismuth is GaN doped with bismuth.

15. The semi-insulating wafer of claim 4 wherein the Ga x Al y In 1-x-y N doped with bismuth is fabricated by slicing a bulk ingot of Ga x Al y In 1-x-y N (0≦x≦1, 0≦x+y≦1) grown in supercritical ammonia.

16. The semi-insulating wafer of claim 15 wherein the Ga x Al y In 1-x-y N doped with bismuth is GaN doped with bismuth.

17. The semi-insulating wafer of claim 4 wherein the Ga x Al y In 1-x-y N doped with bismuth is GaN doped with bismuth.

Assignees

• Sixpoint Materials Inc
• Seoul Semiconductor Co Ltd

Inventors

• Hashimoto Tadao
• Letts Edward
• Hoff Sierra

Classifications

• H10P90/123

  by grinding or lapping · CPC title

• H10P14/2908

  Nitrides · CPC title

• C30B7/10

  by application of pressure, e.g. hydrothermal processes · CPC title

• C30B28/04

  from liquids · CPC title

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title