Germanium FinFETs with metal gates and stressors

Patent metadata

Field	Value
Publication number	US-9245805-B2
Application number	US-83190310-A
Country	US
Kind code	B2
Filing date	Jul 7, 2010
Priority date	Sep 24, 2009
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium.

First claim

What is claimed is:

1. An integrated circuit structure comprising:
a substrate comprising silicon;
shallow trench isolation (STI) regions extending into the substrate;
an n-type fin field effect transistor (FinFET) comprising:
a first germanium fin over top surfaces of the STI regions;
a first gate dielectric on a top surface and sidewalls of the first germanium fin;
a first gate electrode on the first gate dielectric; and
a source/drain region comprising germanium, with a germanium atomic percentage in the source/drain region being lower than a germanium atomic percentage in the first germanium fin, and the source/drain region extends below the top surfaces of the STI regions to contact the substrate;

a p-type FinFET comprising:
a second germanium fin over the substrate, wherein the first germanium fin and the second germanium fin are pure germanium fins;
a second gate dielectric on a top surface and sidewalls of the second germanium fin; and
a second gate electrode on the second gate dielectric, wherein the first gate electrode and the second gate electrode are formed of a same material having a work function between 4.25 eV and 4.4 eV.

2. The integrated circuit structure of claim 1 , wherein the first gate electrode and the second gate electrode are metal gate electrodes.

3. The integrated circuit structure of claim 1 , wherein the n-type FinFET further comprises a source/drain region comprising silicon carbon.

4. The integrated circuit structure of claim 1 , wherein the p-type FinFET further comprises a source/drain region comprising germanium tin (GeSn).

5. The integrated circuit structure of claim 1 further comprising:
a third germanium fin underlying the first gate electrode, wherein the third germanium fin is physically separated from, and electrically connected to, the first germanium fin; and
a fourth germanium fin underlying the second gate electrode, wherein the fourth germanium fin is physically separated from, and electrically connected to, the second germanium fin.

6. An integrated circuit structure comprising:
a substrate comprising silicon;
shallow trench isolation (STI) regions extending into the substrate;
a p-type fin field effect transistor (FinFET) comprising:
a first germanium fin over the substrate;
a first gate dielectric on a top surface and sidewalls of the first germanium fin;
a first metal gate on the first gate dielectric; and
a first source/drain region adjacent the first metal gate, wherein the first source/drain comprises a first epitaxial region formed of a semiconductor material different from the first germanium fin; and

an n-type FinFET comprising:
a second germanium fin over the substrate;
a second gate dielectric on a top surface and sidewalls of the second germanium fin;
a second metal gate on the second gate dielectric, wherein the first metal gate and the second metal gate are formed of a same material; and
a second source/drain region adjacent the second metal gate, with the second source/drain region comprising germanium, and a germanium atomic percentage in the second source/drain region being lower than a germanium atomic percentage in the first germanium fin, wherein a bottom surface of the second source/drain region extends below the top surfaces of the STI regions to contact the substrate.

7. The integrated circuit structure of claim 6 wherein the first source/drain region comprises germanium tin (GeSn).

8. The integrated circuit structure of claim 6 , wherein the first metal gate and the second metal gate are formed of a same material having a work function between 4.25 eV and 4.4 eV.

9. An integrated circuit structure comprising:
a substrate;
shallow trench isolation (STI) regions extending into the substrate;
a p-type fin field effect transistor (FinFET) comprising:
a first germanium fin over the substrate, wherein the first germanium fin is a germanium fin without being doped with silicon;
a first gate dielectric on a top surface and sidewalls of the first germanium fin;
a first metal gate on the first gate dielectric; and
a first source/drain region adjacent to the first metal gate; and

an n-type FinFET comprising:
a second germanium fin over the substrate, wherein the second germanium fin is a germanium fin without being doped with silicon;
a second gate dielectric on a top surface and sidewalls of the second germanium fin;
a second metal gate on the second gate dielectric; and
a second source/drain region adjacent to the second metal gate, wherein the second source/drain region comprises silicon germanium, with a germanium atomic percentage in the second source/drain region being lower than a germanium atomic percentage in the second germanium fin, wherein the second source/drain region extends below the top surfaces of the STI regions to contact the substrate.

10. The integrated circuit structure of claim 9 , wherein the first germanium fin and the second germanium fin are crystal-based germanium fins.

11. The integrated circuit structure of claim 9 , wherein the second source/drain region of the n-type FinFET further comprises silicon carbon.

12. The integrated circuit structure of claim 9 , wherein the first source/drain region of the p-type FinFET further comprises a group III element and a group V element.

13. The integrated circuit structure of claim 9 , wherein the first source/drain region of the p-type FinFET further comprises germanium tin (GeSn).

14. The integrated circuit structure of claim 9 , wherein the first metal gate and the second metal gate are formed of a same material having a work function between 4.25 eV and 4.4 eV.

15. The integrated circuit structure of claim 1 , wherein the first germanium fin is substantially free from silicon.

16. The integrated circuit structure of claim 15 , wherein the source/drain region comprises silicon germanium.

17. The integrated circuit structure of claim 16 , wherein the second germanium fin is substantially free from silicon.

18. The integrated circuit structure of claim 17 , wherein the second source/drain region comprises silicon germanium.

19. The integrated circuit structure of claim 1 , wherein a bottom surface of the first germanium fin is in contact with silicon of the substrate.

Assignees

• Yeh Chih Chieh
• Chang Chih-Sheng
• Wann Clement Hsingjen
• Taiwan Semiconductor Mfg

Inventors

• Yeh Chih Chieh
• Chang Chih-Sheng
• Wann Clement Hsingjen

Classifications

• H10P14/3412

  including tin · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title