Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film

Patent metadata

Field	Value
Publication number	US-9245779-B2
Application number	US-201213565943-A
Country	US
Kind code	B2
Filing date	Aug 3, 2012
Priority date	Aug 5, 2011
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0.

First claim

What is claimed is:

1. A method of preparing a thin film, comprising:
coating a thin film-forming composition on a substrate; and
heat-treating the coated thin film-forming composition under a pressure less than 760 Torr to form a hetero-structure thin film, the hetero-structure thin film including a first layer and a second layer on the first layer,
wherein the thin film-forming composition includes a solvent, wherein the first layer has a refractive index of less that 1.85 and is more porous than the second layer, and
wherein the method increases a thickness of the second layer having a refractive index in the range of about 1.85 to about 2.0 by increasing an evaporation rate of the solvent from the surface of the thin film-forming composition.

2. The method of claim 1 , wherein the coating is performed by one of inkjet printing, spin coating, slit coating, spraying, immersion, a roll-to-roll method, and nanoimprinting.

3. The method of claim 1 , wherein the heat-treating is performed at a pressure in a range of about 1×10 −6 Torr to less than 760 Torr and at a temperature in a range of about 250° C. to about 450° C.

4. The method of claim 1 , wherein the thin film-forming composition further comprises a metal oxide precursor, and a sol stabilizer.

5. The method of claim 4 , wherein the metal oxide precursor comprises at least two selected from the group consisting of a zinc compound, an indium compound, a hafnium compound, a gallium compound, a titanium compound, a zirconium compound, an aluminum compound, a silicon compound, a germanium compound, a tin compound, a magnesium compound, a yttrium compound, a vanadium compound, a lithium compound, a cerium compound, a calcium compound, a potassium compound, a scandium compound, a tantalum compound, a tungsten compound, a copper compound, a molybdenum compound, a ruthenium compound, an antimony compound, a tellurium compound, an iodine compound, an iridium compound, a lead compound, and a bismuth compound.

Assignees

• Ryu Myung-Kwan
• Seon Jong-Baek
• Lee Sang-Yoon
• Samsung Electronics Co Ltd
• Samsung Display Co Ltd

Inventors

• Ryu Myung-Kwan
• Seon Jong-Baek
• Lee Sang-Yoon

Classifications

• H10P72/0431 Primary

  Apparatus for thermal treatment · CPC title

• H10P72/0448 Primary

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• Y10T428/24942

  including components having same physical characteristic in differing degree · CPC title

• Y10T428/265

  1 mil or less · CPC title

• H01L21/67098

  Electricity · mapped topic