Laser annealing treatment apparatus and laser annealing treatment method

Patent metadata

Field	Value
Publication number	US-9245757-B2
Application number	US-201013808875-A
Country	US
Kind code	B2
Filing date	Sep 17, 2010
Priority date	Jul 5, 2010
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

First claim

What is claimed is:

1. A laser annealing treatment apparatus that crystallize a semiconductor comprising:
a laser light source that outputs pulse laser light;
an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment;
a stage to be set for irradiating the semiconductor film by the pulse laser light; and
a waveform shaping unit that shapes the pulse laser light output from the laser light source into a pulse waveform having a rising time and a falling time,
wherein the waveform shaping unit comprises beam splitting means that splits a plurality of times the pulse laser light output from the laser light source into a plurality of beams and delay means that delays each of the split beams, and
wherein the waveform shaping unit shapes the pulse laser light output from the laser light source so that the pulse laser light waveform irradiating the semiconductor film includes a rising time equal to or less than 30 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 85 nanoseconds from the maximum height to 10% of the maximum height.

2. The laser annealing treatment apparatus according to claim 1 , comprising a plurality of laser light sources, wherein beams of the pulse laser light output from the plurality of laser light sources are superimposed to output said pulse laser light for irradiating the semiconductor film.

3. The laser annealing treatment apparatus according to claim 2 , wherein the semiconductor film to be irradiated by the pulse laser light is non single-crystalline silicon.

4. The laser annealing treatment apparatus according to claim 1 , wherein the semiconductor film to be irradiated by the pulse laser light is non single-crystalline silicon.

5. The laser annealing treatment apparatus according to claim 1 , wherein the pulse laser light is excimer laser.

Assignees

• Shida Junichi
• Chung Suk-Hwan
• Machida Masashi
• Japan Steel Works Ltd

Inventors

• Shida Junichi
• Chung Suk-Hwan
• Machida Masashi

Classifications

• H10P14/3816

  Pulsed laser beam · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• B23K26/127

  in an enclosure · CPC title

• B23K26/12

  in a special environment or atmosphere, e.g. in an enclosure · CPC title