Method for etching atomic layer of graphene

Patent metadata

Field	Value
Publication number	US-9245752-B2
Application number	US-201414161050-A
Country	US
Kind code	B2
Filing date	Jan 22, 2014
Priority date	Jul 22, 2011
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

First claim

We claim:

1. An atomic layer etching method for graphene, comprising:
adsorbing reactive radicals on a surface of graphene by exposing the reactive radicals to the surface in a reaction chamber for a predetermined amount of time; and
irradiating an energy source to the surface of graphene on which the reactive radicals are adsorbed after the predetermined amount of time.

2. The atomic layer etching method of claim 1 ,
wherein the adsorbing reactive radicals and the irradiating the energy source are each performed two or more times.

3. The atomic layer etching method of claim 1 ,
wherein the graphene includes stacked multi-layers of graphene thin films.

4. The atomic layer etching method of claim 3 , further comprising:
adjusting a stacking degree of the stacked multi-layers of graphene thin films.

5. The atomic layer etching method of claim 1 ,
wherein a single layer of graphene thin film included in the graphene is etched by performing the adsorbing reactive radicals and the irradiating the energy source each a single time.

6. The atomic layer etching method of claim 1 ,
wherein the reactive radicals include a reactive radical generated by plasma.

7. The atomic layer etching method of claim 6 ,
wherein the plasma includes a member selected from the group consisting of O-based gas plasma, F-based gas plasma, H-based gas plasma, and combinations thereof.

8. The atomic layer etching method of claim 1 ,
wherein the reactive radicals include a member selected from the group consisting of an O radical, an F radical, an H radical, an O 2 radical, an OH radical, an N radical, and combinations thereof.

9. The atomic layer etching method of claim 1 , further comprising:
removing the reactive radicals not adsorbed on the surface of the graphene in the reaction chamber after the adsorbing the step and before the irradiating step.

10. The atomic layer etching method of claim 1 ,
wherein the energy source includes a member selected from the group consisting of a neutral beam, an ion beam, heat energy, plasma, laser, and combinations thereof.

11. The atomic layer etching method of claim 10 ,
wherein the neutral beam contains a non-reactive gas.

12. The atomic layer etching method of claim 10 ,
wherein the neutral beam contains a gas selected from the group consisting of He, Ar, N 2 , Ne, Xe, and combinations thereof.

13. The atomic layer etching method of claim 1 , further comprising:
removing an etching by-product which is generated by irradiating the energy source.

14. The atomic layer etching method of claim 13 , further comprising:
heating the graphene after removing the etching by-product.

15. The atomic layer etching method of claim 14 ,
wherein the heating includes an annealing process.

16. The atomic layer etching method of claim 1 , further comprising:
depositing an etching mask on the surface of graphene.

17. The atomic layer etching method of claim 1 , wherein the adsorption of reactive radicals converts bonds of the graphene from sp 2 bonds to sp 3 bonds.

18. The atomic layer etching method of claim 3 , wherein the step of adsorbing reactive radicals on the surface of the graphene, and the step of irradiating the energy source to the surface on which the reactive radicals are adsorbed, are controlled to thereby selectively remove a single atomic layer portion of the multi-layer graphene surface on which the reactive radicals are adsorbed.

19. The atomic layer etching method of claim 17 , wherein the step of irradiating desorbs the sp 3 bonded carbon atoms at the surface of the graphene.

20. An atomic layer etching method, comprising:
adsorbing reactive radicals onto a graphene surface in a reaction chamber for a predetermined amount of time;
removing from the reaction chamber the reactive radicals not adsorbed on the graphene surface; and
irradiating the reactive radical-adsorbed graphene surface with an energy source to thereby remove a single atomic layer of the graphene surface.

Assignees

• Univ Sungkyunkwan Res & Bus

Inventors

• Yeom Geun Young
• Lim Woong Sun
• Min Kyung Seok
• Kim Yi Yeon
• Oh Jong Sik

Classifications

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• H10D62/8303

  Diamond · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10D48/031

  of three-or-more electrode devices · CPC title

• H10D62/882

  Graphene · CPC title