Intermediate band solar cell using type I and type II quantum dot superlattices

Patent metadata

Field	Value
Publication number	US-9240507-B2
Application number	US-201514589184-A
Country	US
Kind code	B2
Filing date	Jan 5, 2015
Priority date	Jan 28, 2014
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A light receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a first and a second superlattice semiconductor layers, and the first and the second superlattice semiconductor layers each have a superlattice structure in which a barrier layer and a quantum dot layer are alternately and repeatedly stacked. A band structure of the superlattice structure of the first superlattice semiconductor layer is a type I structure, and that of the second superlattice semiconductor layer is a type II structure. The superlattice structures of the first and the second superlattice semiconductor layers each form a superlattice miniband, and a conduction band first superlattice miniband of the superlattice structure of the second superlattice semiconductor layer is lower in lower and energy than a conduction band first superlattice miniband of the superlattice structure of the first superlattice semiconductor layer.

First claim

What is claimed is:

1. A light receiving element, comprising:
a p-type semiconductor layer;
an n-type semiconductor layer; and
a first superlattice semiconductor layer and a second superlattice semiconductor layer arranged between said p-type semiconductor layer and said n-type semiconductor layer,
said first superlattice semiconductor layer and said second superlattice semiconductor layer each having a superlattice structure in which a barrier layer and a quantum dot layer containing quantum dots are alternately and repeatedly stacked,
a band structure of the superlattice structure of said first superlattice semiconductor layer being a type I structure,
a band structure of the superlattice structure of said second superlattice semiconductor layer being a type II structure,
the superlattice structure of said first superlattice semiconductor layer and the superlattice structure of said second superlattice semiconductor layer each forming a superlattice miniband owing to a conduction band quantum level of said quantum dot layer forming said superlattice structure, and
a conduction band first superlattice miniband of the superlattice structure of said second superlattice semiconductor layer being lower in lower end energy than a conduction band first superlattice miniband of the superlattice structure of said first superlattice semiconductor layer.

2. The light receiving element according to claim 1 , wherein
said second superlattice semiconductor layer is arranged on a side of said n-type semiconductor layer.

3. The light receiving element according to claim 1 , wherein
the superlattice miniband formed in the superlattice structure of said first superlattice semiconductor layer overlaps at least in part with the superlattice miniband formed in the superlattice structure of said second superlattice semiconductor layer, or
magnitude of energy gap between the superlattice miniband formed in the superlattice structure of said first superlattice semiconductor layer and the superlattice miniband formed in the superlattice structure of said second superlattice semiconductor layer is equal to or smaller than a total sum of LO phonon energy of a material for the barrier layer of said first superlattice semiconductor layer and thermal energy kT (k representing a Boltzmann constant and T representing an absolute temperature) at room temperature.

4. The light receiving element according to claim 1 , wherein
said first superlattice semiconductor layer is composed of Ga, In, and As, and
said second superlattice semiconductor layer is composed of Ga, In, As, and Sb.

5. The light receiving element according to claim 4 , further comprising a substrate composed of GaAs, wherein
said p-type semiconductor layer, said first superlattice semiconductor layer, said second superlattice semiconductor layer, and said n-type semiconductor layer are stacked in this order on said substrate.

6. A solar cell, comprising the light receiving element according to claim 1 .

7. A light receiving element, comprising:
a superlattice semiconductor layer having a superlattice structure in which a barrier layer and a quantum dot layer containing quantum dots are alternately and repeatedly stacked,
said barrier layer containing at least any of Ga and Al, As, and Sb,
said quantum dot layer containing In and As, and
a value q represented by a composition ratio of said barrier layer Sb/(Sb+As) and a distance d (nm) between said quantum dots in a direction of stack of said superlattice semiconductor layer satisfy relation of q≧(3d+10)/100.

8. The light receiving element according to claim 7 , wherein
the value q represented by the composition ratio of said barrier layer Sb/(Sb+As) and the distance d (nm) between said quantum dots in the direction of stack of said superlattice semiconductor layer satisfy relation of q≧(3d+15)/100.

9. The light receiving element according to claim 7 , further comprising a p-type semiconductor layer and an n-type semiconductor layer, and said superlattice structure lying between said p-type semiconductor layer and said n-type semiconductor layer.

10. A solar cell, comprising the light receiving element according to claim 7 .

Assignees

• Sharp Kk

Inventors

• Yoshikawa Hirofumi
• Izumi Makoto
• Kuzumoto Yasutaka

Classifications

• H10F77/1625

  Semiconductor nanoparticles embedded in semiconductor matrix · CPC title

• H10F77/146

  Superlattices; Multiple quantum well structures · CPC title

• H10F71/127

  The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title

• H10F10/174

  comprising monocrystalline or polycrystalline materials · CPC title

• H10F77/1433 Primary

  Quantum dots · CPC title