Semiconductor device having embedded strain-inducing pattern

Patent metadata

Field	Value
Publication number	US-9240481-B2
Application number	US-201514596291-A
Country	US
Kind code	B2
Filing date	Jan 14, 2015
Priority date	Jun 25, 2012
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a pair of strain-inducing patterns formed in a substrate;
an active region formed between the pair of strain-inducing patterns, and having an upper surface, a first side surface, and a second side surface opposite the first side surface; and
a gate electrode crossing the active region,
wherein each of interfaces between the active region and the pair of strain-inducing patterns has {111} surface formed by a directional etching process, and
wherein each of the first and second side surfaces has {211} surface, the upper surface has {110} surface, and each of the interfaces is perpendicular to the upper surface.

2. The semiconductor device of claim 1 , wherein each of the interfaces is perpendicular to the first side surface and the second side surface.

Assignees

• Maeda Shigenobu
• Fukutome Hidenobu
• Ko Young-Gun
• Jeong Joo-Hyun
• Samsung Electronics Co Ltd

Inventors

• Maeda Shigenobu
• Fukutome Hidenobu
• Ko Young-Gun
• Jeong Joo-Hyun

Classifications

• H10P14/3451

  Structure · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title