Adhesive film for heat dissipation, semiconductor device including the same, and method of fabricating the semiconductor device

Patent metadata

Field	Value
Publication number	US-9240364-B2
Application number	US-201414202006-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	May 30, 2013
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mm 2 or greater.

First claim

What is claimed is:

1. A heat dissipation adhesive film comprising:
a heat dissipation adhesive layer, the heat dissipation adhesive layer being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer to bond the protective layer to the heat dissipation metal layer, wherein:
an adhesive strength between the heat dissipation adhesive layer and the protective layer is about 3 kgf/25 mm 2 or greater,
an adhesive strength between the heat dissipation adhesive layer and the heat dissipation metal layer is about 3 kgf/25 mm 2 or greater, and
the heat dissipation adhesive layer is prepared from a composition that includes:
about 5 wt % to about 35 wt % of a polymer resin,
about 1 wt % to about 35 wt % of an epoxy resin, and
about 20 wt % to about 85 wt % of thermally conductive particles, based on a total weight of the composition.

2. The heat dissipation adhesive film as claimed in claim 1 , wherein the thermally conductive particles include at least one selected from the group of alumina, aluminum nitride, aluminum oxide, boron nitride, aluminum hydroxide, magnesium hydroxide, calcium carbide, magnesium carbide, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, titanium dioxide, and iron oxide particles.

3. The heat dissipation adhesive film as claimed in claim 1 , wherein the heat dissipation adhesive layer further includes a base film.

4. The heat dissipation adhesive film as claimed in claim 1 , wherein the thermally conductive particles are present in an amount of about 30 wt % to about 80 wt %, based on the total weight of the composition.

5. The heat dissipation adhesive film as claimed in claim 1 , wherein the heat dissipation adhesive film has a thermal conductivity of 1 W/mK or greater.

6. The heat dissipation adhesive film as claimed in claim 1 , wherein the polymer resin includes an epoxy group containing acrylic polymer resin.

7. The heat dissipation adhesive film as claimed in claim 1 , wherein the thermally conductive particles include aluminum nitride or boron nitride.

8. A semiconductor device, comprising:
a semiconductor element;
a protective layer encasing the semiconductor element therein;
a heat dissipation adhesive layer on the protective layer; and
a heat dissipation metal layer on the heat dissipation adhesive layer,
wherein:
an adhesive strength between the heat dissipation adhesive layer and the protective layer is about 3 kgf/25 mm 2 or greater, and
an adhesive strength between the heat dissipation adhesive layer and the heat dissipation metal layer is about 3 kgf/25 mm 2 or greater, and
the heat dissipation adhesive layer is prepared from a composition that includes:
about 5 wt % to about 35 wt % of a polymer resin,
about 1 wt % to about 35 wt % of an epoxy resin, and
about 20 wt % to about 85 wt % of thermally conductive particles, based on a total weight of the composition.

9. The semiconductor device as claimed in claim 8 , wherein:
the semiconductor element includes an exposed surface that is not encased by the protective layer, and
the heat dissipation adhesive layer contacts both the exposed surface and the protective layer.

10. The semiconductor device as claimed in claim 9 , wherein the adhesive strength between the heat dissipation adhesive layer and the semiconductor element is about 3 kgf/25 mm 2 or greater.

11. The semiconductor device as claimed in claim 8 , wherein the heat dissipation adhesive layer has a thermal conductivity of about 1 W/mK or greater.

12. The semiconductor device as claimed in claim 8 , wherein the polymer resin includes an epoxy group containing acrylic polymer resin.

13. The semiconductor device as claimed in claim 8 , wherein the thermally conductive particles include aluminum nitride or boron nitride.

14. A method of fabricating a semiconductor device, the method comprising:
forming a protective layer encasing a semiconductor element therein,
forming a heat dissipation adhesive layer and a heat dissipation metal layer on the protective layer, the heat dissipation adhesive layer having a thermal conductivity of about 1 W/mK or greater,
wherein forming the heat dissipation adhesive layer includes applying a composition, the composition including:
about 5 wt % to about 35 wt % of a polymer resin,
about 1 wt % to about 35 wt % of an epoxy resin, and
about 20 wt % to about 85 wt % of thermally conductive particles, based on a total weight of the composition.

15. The method as claimed in claim 14 , wherein:
an adhesive strength between the heat dissipation adhesive layer and the protective layer is about 3 kgf/25 mm 2 or greater, and
an adhesive strength between the heat dissipation adhesive layer and the heat dissipation metal layer is about 3 kgf/25 mm 2 or greater.

16. The method as claimed in claim 14 , wherein, in forming of the protective layer, the semiconductor element includes an exposed surface that is not encased by the protective layer, and the heat dissipation adhesive layer contacts both the exposed surface and the protective layer.

17. The method as claimed in claim 16 , wherein an adhesive strength between the heat dissipation adhesive layer and the semiconductor element is about 3 kgf/25 mm 2 or greater.

18. The method as claimed in claim 14 , wherein the forming the heat dissipation adhesive layer and the heat dissipation metal layer includes forming together a heat dissipation adhesive film on the protective layer, the heat dissipation adhesive film including a heat dissipation metal layer and a heat dissipation adhesive layer having a thermal conductivity of 1 W/mK or more.

19. The method as claimed in claim 14 , wherein the polymer resin includes an epoxy group containing acrylic polymer resin.

20. The method as claimed in claim 14 , wherein the thermally conductive particles include aluminum nitride or boron nitride.

Assignees

• Park Baek Soung
• Choi Jae Won
• Kim In Hwan
• Song Gyu Seok
• Lim Su Mi
• Cheil Ind Inc

Inventors

• Park Baek Soung
• Choi Jae Won
• Kim In Hwan
• Song Gyu Seok
• Lim Su Mi

Classifications

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title