Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9238257-B2
Application number	US-86218010-A
Country	US
Kind code	B2
Filing date	Aug 24, 2010
Priority date	Aug 27, 2009
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
(a) loading a substrate into a processing chamber;
(b) forming a nitride film including a conductive film or an insulating film on the substrate by alternately supplying a plurality of source gases into the processing chamber;
(c) unloading the substrate from the processing chamber;
(d) changing a composition of the nitride film adhered to the processing chamber formed in the step (b) into an oxide film by oxidizing the nitride film adhered to the processing chamber by supplying an oxygen-containing gas into the processing chamber; and
(e) removing the oxide film by supplying a cleaning gas into the processing chamber and exhausting the cleaning gas from the processing chamber after performing a cycle of the steps (a), (b), (c) and (d) a plurality of times,
wherein a nitro n concentration of a surface of the nitride film adhered to the processing chamber is decreased and an oxygen concentration of the surface of the nitride film adhered to the processing chamber is increased in the step (d).

2. The method of claim 1 , wherein the cleaning gas is a halogen compound.

3. The method of claim 2 , wherein the plurality of source gases comprise at least one of a halogen or organic compound and a nitrogen-containing gas.

4. The method of claim 1 , wherein the step (e) is performed a predetermined number of times after the step (d) is performed once.

5. The method of claim 1 , wherein the steps (b) and (d) are performed at different temperatures.

6. The method of claim 1 , wherein the cleaning gas comprises a gas reactive with the oxide film to generate a reaction product with a high vapor pressure.

7. The method of claim 1 , wherein the cleaning gas comprises at least one gas selected from a group consisting of BCI 3 , HCI, CI 2 , SiCI 4 , HBr, BBr 3 , SiBr 4 and Br 2 .

8. The method of claim 1 , wherein the nitride film comprises a film selected from a group consisting of AIN, TiN, TiAIN, TiSiN, TaN, TaSiN and SiN films.

9. The method of claim 1 , wherein the oxygen-containing source comprises at least one gas selected from a group consisting of O 2 , O 3 , H 2 O, H 2 +O 2 , CO x , SO x and N x O, wherein x is an integer equal to or greater than 1.

10. The method of claim 1 , wherein nitrogen atoms in the nitride film adhered to the processing chamber are replaced with oxygen atoms in the step (d).

11. A cleaning method for removing a nitride film adhered to a processing chamber of a substrate processing apparatus configured to process a substrate by supplying a source gas, the cleaning method comprising:
(a) changing a composition of the nitride film adhered to the processing chamber into an oxide film by oxidizing the nitride film adhered to the processing chamber by supplying an oxygen-containing gas into the processing chamber; and
(b) removing the oxide film by alternately repeating supplying a cleaning gas into the processing chamber and exhausting the cleaning gas from the processing chamber,
wherein a nitrogen concentration of a surface of the nitride film adhered to the processing chamber is decreased and an oxygen concentration of the surface of the nitride film adhered to the processing chamber is increased in the step (a).

12. A method of manufacturing a semiconductor device, the method comprising:
(a) loading a boat holding a substrate into a processing chamber;
(b) forming a nitride film including a conductive film or an insulating film on the substrate by alternately supplying a plurality of source gases into the processing chamber;
(c) unloading the boat from the processing chamber;
(d) discharging the substrate from the boat and loading the boat without the substrate into the processing chamber;
(e) changing a composition of the nitride film adhered to the processing chamber and the boat formed in the step (b) into an oxide film by oxidizing the nitride film adhered to the processing chamber and the boat by supplying an oxygen-containing gas into the processing chamber; and
(f) removing the oxide film adhered to the processing chamber and the boat by supplying a cleaning gas into the processing chamber and exhausting the cleaning gas from the processing chamber after performing a cycle of the steps (a), (b), (c), (d) and (e) a plurality of times,
wherein a nitro en concentration of a surface of the nitride film adhered to the processing chamber is decreased and an oxygen concentration of the surface of the nitride film adhered to the processing chamber is increased in the step (e).

13. The method of claim 12 , wherein the oxygen-containing gas comprises a mixture of O 2 gas and H 2 gas.

14. The method of claim 12 , wherein the nitride film comprises a film selected from a group consisting of AIN, TiN, TiAIN, TiSiN, TaN, TaSiN and SiN films.

15. The method of claim 12 , wherein the oxygen-containing source comprises at least one gas selected from a group consisting of O 2 , O 3 , H 2 O, H 2 +O 2 , CO x , SO x and N x O, wherein x is an integer equal to or greater than 1.

16. The method of claim 12 , wherein nitrogen atoms in the nitride film adhered to the processing chamber are replaced with oxygen atoms in the step (e).

17. A cleaning method for removing a nitride film adhered to a processing chamber of a substrate processing apparatus configured to process a substrate by: loading a boat holding the substrate into the processing chamber; processing the substrate by alternately supplying a plurality of source gases into the processing chamber; and unloading the boat from the processing chamber, the cleaning method comprising:
(a) discharging the substrate from the boat and loading the boat without the substrate into the processing chamber;
(b) changing a composition of the nitride film adhered to the processing chamber and the boat into an oxide film by oxidizing the nitride film adhered to the processing chamber and the boat by supplying an oxygen-containing gas into the processing chamber; and
(c) removing the oxide film adhered to the processing chamber and the boat by supplying a cleaning gas into the processing chamber and exhausting the cleaning gas from the processing chamber after the nitride film is formed on the substrate a plurality of times,
wherein a nitrogen concentration of a surface of the nitride film adhered to the processing chamber is decreased and an oxygen concentration of the surface of the nitride film adhered to the processing chamber is increased in the step (b).

Assignees

• Sakai Masanori
• Kaga Yukinao
• Yokogawa Takashi
• Saito Tatsuyuki
• Hitachi Int Electric Inc

Inventors

• Sakai Masanori
• Kaga Yukinao
• Yokogawa Takashi
• Saito Tatsuyuki

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P14/432

  using selective deposition · CPC title

• C23C16/4405

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• C23C16/4404

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• B08B7/00 Primary

  Cleaning by methods not provided for in a single other subclass or a single group in this subclass · CPC title