Polishing agent, stock solution for polishing agent, and polishing method

Patent metadata

Field	Value
Publication number	US-10946494-B2
Application number	US-201615556824-A
Country	US
Kind code	B2
Filing date	Mar 8, 2016
Priority date	Mar 10, 2015
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.

First claim

The invention claimed is:

1. A polishing agent, comprising:abrasive grains; a water-soluble polymer comprising an α-glucose polymer; an organic solvent; and water, wherein the abrasive grains have a positive charge in the polishing agent, and an average particle diameter of the abrasive grains is larger than 20 nm, and pH of the polishing agent is 1.0 or more and less than 3.0.

2. The polishing agent according to claim 1 , wherein the water-soluble polymer further comprises a polyether.

3. The polishing agent according to claim 1 , wherein the abrasive grains comprise colloidal silica.

4. The polishing agent according to claim 1 , wherein pH of the polish agent is 1.0 to 2.5.

5. The polishing agent according to claim 1 , further comprising a corrosion preventive agent.

6. The polishing agent according to claim 1 , further comprising an oxidizing agent.

7. The polishing agent according to claim 1 , further comprising a pH adjusting agent.

8. The polishing agent according to claim 1 , further comprising a surfactant in an amount of 0.0001 to 0.1 mass % based on a total mass of the polishing agent.

9. A multi-pack polishing agent for obtaining the polishing agent according to claim 1 , the multi-pack polishing agent comprising:
a first liquid comprising the abrasive grains and the water, and
a second liquid comprising the water-soluble polymer, the organic solvent and the water.

10. A stock solution for obtaining the polishing agent according to claim 1 , wherein the stock solution is diluted with water to obtain the polishing agent.

11. A polishing method comprising:
preparing a base material having a resin; and
chemically-mechanically polishing the base material by using the polishing agent according to claim 1 to remove at least a part of the resin.

12. A polishing method comprising:
preparing a base material having a resin;
obtaining a polishing agent by diluting the stock solution according to claim 10 with water; and
chemically-mechanically polishing the base material by using the polishing agent to remove at least a part of the resin.

13. A polishing method comprising:
preparing a base material having a resin;
obtaining a polishing agent by mixing the first liquid and the second liquid from the multi-pack polishing agent according to claim 9 ; and
chemically-mechanically polishing the base material by using the polishing agent to remove at least a part of the resin.

14. The polishing agent according to claim 1 , wherein the α-glucose polymer is selected from the group consisting of amylose, dextran, dextrin, maltodextrin, cluster dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, maltose, isomaltose, maltotriose and stachyose.

15. The polishing agent according to claim 1 , wherein the average particle diameter of the abrasive grains is larger than 70 nm.

16. The polishing agent according to claim 6 , wherein the oxidizing agent comprises an agent selected from the group consisting of hydrogen peroxide, peroxosulfate, potassium periodate, hypochlorous acid and ozone water.

17. The polishing agent according to claim 1 , wherein the organic solvent comprises a solvent selected from the group consisting of glycols, derivatives of the glycols, and a combination thereof.

18. The polishing agent according to claim 1 , further comprising an acid component.

19. The polishing agent according to claim 1 , further comprising a polishing inhibitor for an insulating material.

Assignees

• Hitachi Chemical Co Ltd
• Showa Denko Materials Co Ltd

Inventors

• Hanano Masayuki
• Nishiyama Masaya
• GOH Yutaka
• Sakurai Haruaki
• Iwano Tomohiro

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title