Electronic device and method for fabricating an electronic device

Patent metadata

Field	Value
Publication number	US-9230880-B2
Application number	US-201414165754-A
Country	US
Kind code	B2
Filing date	Jan 28, 2014
Priority date	Jan 28, 2014
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

An electronic device includes a semiconductor chip including an electrode, a substrate element and a contact element connecting the electrode to the substrate element. The electronic device further includes an encapsulant configured to leave the contact element at least partially exposed such that a heatsink may be connected to the contact element.

First claim

What is claimed is:

1. An electronic through-hole device, comprising:
a semiconductor chip comprising a first electrode on a first surface of the semiconductor chip;
an encapsulant encapsulating the semiconductor chip;
a first substrate element comprising a first outside contact configured for input in a through-hole contact of a printed circuit board; and
a contact element configured to connect the first electrode to the first substrate element;
wherein the encapsulant is configured to at least partially expose the contact element.

2. The electronic through-hole device of claim 1 , further comprising a heatsink thermally connected to the contact element.

3. The electronic through-hole device of claim 2 , wherein the heatsink is mechanically fixed on the contact element via one or more of a screw and a clamp.

4. The electronic through-hole device of claim 1 , wherein the encapsulant comprises a step on a front-side of the encapsulant comprising the at least partially exposed contact element.

5. The electronic through-hole device of claim 1 , wherein the contact element comprises a contact clip.

6. The electronic through-hole device of claim 5 , wherein the contact clip is one contiguous part.

7. The electronic through-hole device of claim 5 , wherein the contact clip comprises more than one part.

8. The electronic through-hole device of claim 1 , wherein the first electrode is a source electrode or an emitter electrode.

9. The electronic through-hole device of claim 1 , wherein the first substrate element comprises a first lead of the electronic through-hole device.

10. The electronic through-hole device of claim 1 , wherein the first surface of the semiconductor chip comprises four edges and the contact element traverses at least two of the four edges.

11. The electronic through-hole device of claim 9 , further comprising:
a second electrode on a second surface of the semiconductor chip; and
a second substrate element connected to the second electrode.

12. The electronic through-hole device of claim 11 , wherein the second electrode is a drain electrode or a collector electrode.

13. The electronic through-hole device of claim 12 , further comprising:
a third electrode on the first surface of the semiconductor chip, wherein the third electrode is a gate electrode or a base electrode.

14. The electronic through-hole device of claim 13 , further comprising:
a second lead element electrically connected to the drain electrode; and
a third lead element electrically connected to the gate electrode,
wherein the first, second and third lead elements are configured for insertion in through-holes of a printed circuit board.

15. The electronic through-hole device of claim 1 , wherein a surface of the encapsulant is coplanar with an at least partially exposed surface of the contact element.

16. An electronic through-hole device, comprising:
a semiconductor chip comprising a first electrode on a first surface of the semiconductor chip;
a first external connector element configured for input in a through-hole contact of an external component;
a contact element configured to connect the first electrode to the first external connector element; and
a heatsink connected to the contact element.

17. A method for fabricating an electronic through-hole device, the method comprising:
providing a semiconductor chip comprising a first electrode on a first surface of the semiconductor chip;
providing a first substrate element which comprises a first outside contact configured for input in a through-hole contact of an external component;
electrically connecting the first electrode to the first substrate element using a contact element; and
providing an encapsulant encapsulating the semiconductor chip, the encapsulant configured to at least partially expose the contact element.

18. The method of claim 17 , further comprising grinding the encapsulant to at least partially expose the contact element.

19. The method of claim 17 , wherein during encapsulation the encapsulant is applied such that the contact element remains at least partially exposed.

20. The method of claim 17 , further comprising:
connecting a heatsink to the partially exposed contact element.

Assignees

• Infineon Technologies Ag
• Infineon Technolgies Ag

Inventors

• Otremba Ralf
• Hoeglauer Josef
• Schredl Juergen
• Lee Teck Sim
• Schloegel Xaver
• Schiess Klaus

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07637

  using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title

• H10W72/07636

  Soldering or alloying · CPC title

• H10W72/652

  comprising metals or metalloids, e.g. silver · CPC title