PLZT capacitor on glass substrate

US9230739B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9230739-B2
Application numberUS-201314065837-A
CountryUS
Kind codeB2
Filing dateOct 29, 2013
Priority dateOct 29, 2013
Publication dateJan 5, 2016
Grant dateJan 5, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

First claim

Opening claim text (preview).

We claim: 1. A method of forming a capacitor, said method comprising: providing a substrate formed of glass; depositing a first electrode on top of the substrate by electron-beam evaporation; depositing a dielectric layer formed of lead-lanthanum-zirconium-titanate (PLZT) deposited on top of the first electrode using a sol-gel process; and depositing a second electrode on top of the dielectric layer by electron-beam evaporation. 2. The method in accordance with claim 1 , wherein depositing the dielectric layer includes annealing the dielectric layer onto the first electrode and the substrate at six-hundred-fifty degrees Celsius (650° C.). 3. The method in accordance with claim 1 , wherein the method includes rolling the capacitor into a tube-shape, wherein the tube-shape has a radius of less than ten millimeters (10 mm).

Assignees

Inventors

Classifications

  • having dielectrics comprising perovskite structures · CPC title

  • H01G4/1245Primary

    containing also titanates · CPC title

  • Electricity · mapped topic

  • Multiple capacitors, i.e. structural combinations of fixed capacitors · CPC title

  • Selection of materials · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9230739B2 cover?
A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as…
Who is the assignee on this patent?
Delphi Tech Inc, Uchicago Argonne Llc Operator Of Argonne Nat Lab, Uchicago Argonne Llc
What technology area does this patent fall under?
Primary CPC classification H01G4/1245. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).