Over-current protection device
US-2024387080-A1 · Nov 21, 2024 · US
US9230718B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9230718-B2 |
| Application number | US-201314061238-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 23, 2013 |
| Priority date | Nov 6, 2012 |
| Publication date | Jan 5, 2016 |
| Grant date | Jan 5, 2016 |
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Official abstract text for this publication.
A chip thermistor includes a thermistor element body and a pair of outer electrodes. The thermistor element body has a pair of end faces opposing each other and a main face connecting the end faces to each other. The pair of outer electrodes are arranged on the pair of end faces, respectively. The pair of outer electrodes have a width in a direction intersecting the opposing direction of the pair of end faces made narrower with distance from the thermistor element body.
Opening claim text (preview).
What is claimed is: 1. A chip thermistor comprising: a thermistor element body having a pair of end faces opposing each other and a main face connecting the end faces to each other; and a pair of outer electrodes arranged respectively on the pair of end faces, wherein each of the pair of outer electrodes is formed into a truncated quadrangular pyramid and has a width in a direction intersecting the opposing direction of the pair of end faces made narrower with distance from the thermistor element body; wherein each of the pair of outer electrodes has a foundation electrode layer arranged on a respective one of the end faces and a plating film covering the foundation electrode layer; and wherein each foundation electrode layer is formed into a truncated quadrangular pyramid and has a width in the direction intersecting the opposing direction not greater than that of the respective one of the end faces and made narrower with distance from the thermistor element body. 2. The chip thermistor according to claim 1 , wherein each foundation electrode layer is porous. 3. The chip thermistor according to claim 2 , wherein each foundation electrode layer has a porosity of 10% to 80%. 4. The chip thermistor according to claim 1 , wherein the plating films are formed directly on the respective foundation electrode layers.
Precursor compositions therefor, e.g. pastes, inks, glass frits · CPC title
adapted for manufacturing resistor chips · CPC title
the terminals embracing or surrounding the resistive element (H01C1/142 takes precedence) · CPC title
characterised by the material of the terminals · CPC title
Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title
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