Wafer level packaged infrared (IR) focal plane array (FPA) with evanescent wave coupling

Patent metadata

Field	Value
Publication number	US-9227839-B2
Application number	US-201414270945-A
Country	US
Kind code	B2
Filing date	May 6, 2014
Priority date	May 6, 2014
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

First claim

What is claimed is:

1. A structure for detecting electromagnetic radiation having a predetermined wavelength, comprising: a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation; a cover wafer having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a r:mrfoce of the sensing element; a bond gap spacer structure for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a predetermined distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer, wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

2. A structure for detecting electromagnetic radiation having a predetermined wavelength, comprising: a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation; a bulk silicon cover wafer having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element:
a bond gap spacer structure for supporting the surface of the sensing element from an opposing surface of the transparent region of the bulk silicon cover wafer a predetermined distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer, wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

3. The structure recited in claim 2 wherein the cover wafer has a thickness of about 500 to 700 microns, and a groove having a depth of about 25 to 50 micrometers disposed in surface thereof and disposed about the window, the window being disposed in the inner portion of the cover wafer.

4. The structure recited in claim 2 wherein the bond gap spacer forms a gap between the surface of the sensing element and the opposing surface of the transparent region of the cover wafer to enable evanescent wave coupling across the gap.

5. The structure recited in claim 2 , wherein the wavelength is between 7 to 13 micrometers.

6. The structure recited in claim 5 wherein the gap is about 10,000 to 25, 000 Angstroms.

7. The structure recited in claim 3 wherein the wavelength is between 7 to 13 micrometers.

8. The structure recited in claim 7 wherein the gap is about about 10,000 to 25,000 Angstroms.

9. The structure recited in claim 2 , wherein the sensing element is a bolometer.

10. The structure recited in claim 2 wherein the sensing element is a bolometer.

11. The structure recited in claim 3 wherein the sensing element is a bolometer.

12. The structure recited in claim 4 wherein the sensing element is a bolometer.

13. The structure recited in claim 5 wherein the sensing element is a bolometer.

14. The structure recited in claim 6 wherein the sensing element is a bolometer.

Assignees

• Raytheon Co

Inventors

• Gooch Roland W
• Black Stephen H
• Kocian Thomas A
• Kennedy Adam M
• Diep Buu Q

Classifications

• G01J5/0801

  Means for wavelength selection or discrimination · CPC title

• B81C1/00317 Primary

  Packaging optical devices · CPC title

• H01L37/00

  Electricity · mapped topic

• B81B7/0067 Primary

  for controlling the passage of optical signals through the package · CPC title

• B81B7/0035

  for maintaining a controlled atmosphere inside of the chamber containing the MEMS · CPC title