Semiconductor Device Containing Chalcogen Atoms and Method of Manufacturing
US-2015380492-A1 · Dec 31, 2015 · US
P-type metal oxide semiconductor
US8927986B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8927986-B2 |
| Application number | US-201314039188-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 27, 2013 |
| Priority date | Sep 28, 2012 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In 1−x Ga 1−y M x+y ZnO 4+m , wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10 15 ˜6×10 19 cm −3 .
First claim
Opening claim text (preview).
What is claimed is: 1. A p-type metal oxide semiconductor material having the following formula: In 1−x Ga 1−y M x+y ZnO 4+m , wherein M is Calcium, Magnesium, or Copper, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10 15 ˜6×10 19 cm −3 . 2. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Calcium, 0.0005≦x≦0.1, y=0. 3. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Magnesium, 0.001≦x≦0.005, y=0. 4. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Copper, 0.001≦x≦0.1, y=0. 5. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Magnesium, x=0, 0.001≦y≦0.1. 6. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Copper, x=0, 0.025≦y≦0.1.
Assignees
Inventors
Classifications
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
characterised by the materials · CPC title
Materials of the light-emitting regions · CPC title
- H10D62/81Primary
of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation · CPC title
- H01L29/12Primary
Electricity · mapped topic
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- What does patent US8927986B2 cover?
- The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In 1−x Ga 1−y M x+y ZnO 4+m , wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10 15 ˜6×10 19 cm −3 .
- Who is the assignee on this patent?
- Ind Tech Res Inst
- What technology area does this patent fall under?
- Primary CPC classification H10D62/81. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).