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US-12056602-B2 · Aug 6, 2024 · US
Resistance-based memory having two-diode access device
US9224467B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224467-B2 |
| Application number | US-201414147817-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2014 |
| Priority date | Sep 28, 2010 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Abstract
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A resistance-based memory includes a two-diode access device. In a particular embodiment, a method includes biasing a bit line with a first voltage. The method further includes biasing the sense line with a second voltage. Biasing the bit line and biasing the sense line generates a current through a resistance-based memory element and through one of a first diode and a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: a memory cell comprising a word line, a bit line, a sense line, and a resistance-based memory element; means for accepting a current from the word line through the resistance-based memory element; and means for accepting a current from the sense line through the resistance-based memory element and for opposing the current from the word line through the resistance-based memory element. 2. The apparatus of c…
Assignees
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Classifications
- G11C13/0069Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G11C11/16Primary
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9224467B2 cover?
- A resistance-based memory includes a two-diode access device. In a particular embodiment, a method includes biasing a bit line with a first voltage. The method further includes biasing the sense line with a second voltage. Biasing the bit line and biasing the sense line generates a current through a resistance-based memory element and through one of a first diode and a second diode. A cathode o…
- Who is the assignee on this patent?
- Qualcomm Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0069. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).