Package-on-package with via on pad connections

Patent metadata

Field	Value
Publication number	US-9214450-B2
Application number	US-201414157745-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Mar 12, 2013
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

An interposer includes a core dielectric material, a conductive pipe penetrating through the core dielectric material, and a metal pad underlying the conductive pipe. The metal pad includes a center portion overlapped by a region encircled by the conductive pipe, and an outer portion in contact with the conductive pipe. A dielectric layer is underlying the core dielectric material and the metal pad. A via is in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

First claim

What is claimed is:

1. A package comprising:
an interposer comprising:
a core dielectric material;
a through-opening extending from a top surface to a bottom surface of the core dielectric material;
a conductive pipe penetrating through the core dielectric material;
a first device die in the through-opening, wherein the first device die comprises electrical connectors;
a molding material in the through-opening over the first device die and between the core dielectric material and the first device die;

a top package; and
a solder bonding the top package to the conductive pipe, wherein the solder extends into the conductive pipe.

2. The package of claim 1 further comprising:
a metal pad underlying the conductive pipe, wherein the metal pad comprises:
a center portion overlapped by a solder in the conductive pipe; and
an outer portion in contact with a perimeter of the conductive pipe;

a dielectric layer underlying the core dielectric material and the metal pad; and
a via in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

3. The package of claim 1 further comprising:
a metal line underlying and connected to the via; and
a solder ball underlying and electrically coupled to the metal line.

4. The package of claim 1 , wherein the molding material comprises a portion overlapping the first device die, and wherein a top surface of the molding material is level with a top surface of the interposer.

5. The package of claim 1 , wherein a bottom surface of the molding material is level with bottom ends of the electrical connectors of the first device die.

6. The package of claim 1 , wherein the top package comprises:
a package substrate; and
a second device die bonded to the package substrate.

7. The package of claim 6 , wherein the solder is in contact with a metal pad in the package substrate.

8. The package of claim 1 , wherein the electrical connectors of the device die face away from the top package.

9. A package comprising:
an interposer comprising:
a core dielectric material;
a conductive pipe penetrating through the core dielectric material;
a metal pad underlying the conductive pipe;
a dielectric layer underlying the core dielectric material and the metal pad;

a top package; and
a solder region bonding the top package to the conductive pipe, wherein the solder region extends into the conductive pipe.

10. The package of claim 9 , wherein the metal pad comprises:
a center portion overlapped by a region encircled by the conductive pipe; and
an outer portion in contact with the conductive pipe.

11. The package of claim 10 , wherein the outer portion of the metal pad extends beyond a perimeter of the conductive pipe.

12. The package of claim 10 further comprising a via in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

13. The package of claim 12 further comprising:
a metal line underlying and connected to the via; and
an electrical connector underlying and electrically coupled to the metal line.

14. The package of claim 9 , wherein the conductive pipe comprises a metal selected from the group consisting essentially of copper, aluminum, tungsten, nickel, and combinations thereof.

15. The package of claim 9 further comprising a device die, wherein the interposer further comprises:
a through-opening, with the device die in the through-opening; and
a plurality of conductive pipes penetrating through the core dielectric material, wherein the plurality of conductive pipes is disposed in a region encircling the through-opening.

16. The package of claim 9 , wherein the conductive pipe is empty inside.

17. A package comprising:
an interposer comprising:
a through-opening extending from a top surface to a bottom surface of the interposer;
a conductive pipe penetrating through the interposer;
a metal pad underlying and in contact with the conductive pipe;
a device die in the through-opening, wherein a bottom surface of the device die is substantially level with a bottom surface of the metal pad;

a top package; and
a solder region bonding the top package to the conductive pipe.

18. The package of claim 17 further comprising a molding material in the through-opening and in contact with over device die.

19. The package of claim 17 , wherein the solder region extends into the conductive pipe.

20. The package of claim 19 , wherein the solder region contacts a top surface of the metal pad.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Wu Jiun Yi

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title