Reflective mask and method of making same

Patent metadata

Field	Value
Publication number	US-9213232-B2
Application number	US-201414531639-A
Country	US
Kind code	B2
Filing date	Nov 3, 2014
Priority date	Apr 20, 2012
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

First claim

What is claimed is:

1. A method comprising:
forming a stack of reflective multilayers (ML) on a substrate;
forming a capping layer over the stack of reflective ML;
forming a first absorption layer over the capping layer;
removing a portion the first absorption layer to form a main pattern and a border ditch, wherein the border ditch extends to at least the capping layer;
forming a second absorption layer in the border ditch; and
forming a protection layer over the second…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Hsu Pei-Cheng
• Shih Chih-Tsung
• Chen Chia-Jen
• Wu Tsiao-Chen
• Yu Shinn-Sheng
• Lee Hsin-Chang
• Yen Anthony

Classifications

• G03F1/48

  Physics · mapped topic

• H10P76/4085

  Electricity · mapped topic

• G03F1/24 Primary

  Physics · mapped topic

• H01L21/0337

  Electricity · mapped topic