Technique for temperature measurement and calibration of semiconductor workpieces using infrared

Patent metadata

Field	Value
Publication number	US-9212949-B2
Application number	US-201414228802-A
Country	US
Kind code	B2
Filing date	Mar 28, 2014
Priority date	Mar 28, 2014
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

An improved system and method of measuring the temperature of a workpiece in a processing chamber is disclosed. Because silicon has very low emissivity in the infrared band, a coating is disposed on at least a portion of the workpiece. This coating may be graphite or any other material that can be readily applied, and has a relatively constant emissivity over temperature in the infrared spectrum. In one embodiment, a coating of graphite is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. This technique can be used to calibrate a processing chamber, validate operating conditions within the processing chamber, or to develop a manufacturing process.

First claim

What is claimed is:

1. A processing system, comprising:
a platen;
a calibration workpiece disposed on said platen;
an IR camera using a range of wavelengths in an infrared spectrum to determine a temperature of said calibration workpiece; and
a coating disposed on a portion of an upper surface of said calibration workpiece, said coating having a nearly constant emissivity over a range of temperatures at said range of wavelengths.

2. The processing syste…

Assignees

• Varian Semiconductor Equipment

Inventors

• Krampert Jeffrey E
• Fish Roger B

Classifications

• H10P72/0602

  Electricity · mapped topic

• H01J2237/2065

  Electricity · mapped topic

• G01K15/005

  Physics · mapped topic

• H01J2237/31701

  Electricity · mapped topic

• H01J37/20

  Electricity · mapped topic