Power semiconductor module having layered insulating side walls

Patent metadata

Field	Value
Publication number	US-9210826-B2
Application number	US-200913256275-A
Country	US
Kind code	B2
Filing date	Mar 13, 2009
Priority date	Mar 13, 2009
Publication date	Dec 8, 2015
Grant date	Dec 8, 2015

Abstract

A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.

First claim

The invention claimed is:

1. A power semiconductor module, comprising:
a module housing having an electrically insulating side wall, said insulating side wall being entirely constructed as a stack of insulating partial elements formed as a single piece, said partial elements having contact areas resting against one another;
at least two interconnected power semiconductor units disposed in said module housing and having switchable power semiconductors; and
at least one connecting bar extended through said side wall and connected to at least one of said power semiconductor units;
said partial elements being circumferentially closed.

2. The power semiconductor module according to claim 1 , wherein said partial elements have at least one reinforcing rib.

3. The power semiconductor module according to claim 1 , wherein one said at least one connecting bar is extended through said side wall between two of said partial elements.

4. The power semiconductor module according to claim 1 , wherein said contact area of at least one of said partial elements has a cutout formed therein through which one said at least one connecting bar extends.

5. The power semiconductor module according to claim 1 , wherein said cutout and said one connecting bar extended through said cutout have mutually complementary shapes.

6. The power semiconductor module according to claim 1 , wherein said partial elements are formed of a fiber-reinforced plastic.

7. The power semiconductor module according to claim 1 , wherein each of said power semiconductor units has power semiconductor chips and a unit housing in which said power semiconductor chips are disposed.

8. The power semiconductor module according to claim 7 , which further comprises bonding wires interconnecting said power semiconductor chips.

9. The power semiconductor module according to claim 1 , which further comprises a base plate and a cover plate, at least one of said base plate and said cover plate being constructed as a cooling plate, and said insulating side wall being extended between said base plate and said cover plate.

Assignees

• Billmann Markus
• Bloesch Christoph
• Malipaard Dirk
• Zenkner Andreas
• Siemens Ag
• Fraunhofer Ges Forschung

Inventors

• Billmann Markus
• Bloesch Christoph
• Malipaard Dirk
• Zenkner Andreas

Classifications

• H10W76/60

  Seals · CPC title

• H10W76/12

  characterised by their shape · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H05K7/14339

  specially adapted for high voltage operation · CPC title