Integrated circuit manufacturing for low-profile and flexible devices

Patent metadata

Field	Value
Publication number	US-9209083-B2
Application number	US-201214232211-A
Country	US
Kind code	B2
Filing date	Jul 11, 2012
Priority date	Jul 11, 2011
Publication date	Dec 8, 2015
Grant date	Dec 8, 2015

Abstract

A process for manufacturing low-profile and flexible integrated circuits includes manufacturing an integrated circuit on a wafer having a thickness larger than the desired thickness. After the integrated circuit is manufactured the integrated circuit may be released with a portion of the wafer leaving a remainder of the bulk portion of the wafer. A second integrated circuit may be manufactured on the remainder of the wafer and the process repeated to manufacture additional integrated circuits from a single wafer. The integrated circuits may be released from the wafer by etching vias through the integrated circuit and into the wafer. The via may be used to start an etch process inside the wafer that undercuts the integrated circuit separating the integrated circuit from the wafer.

First claim

The invention claimed is:

1. A method, comprising:
manufacturing an integrated circuit on at least a portion of a surface of a wafer, wherein the wafer comprises a bulk portion below the surface of the wafer;
etching at least one via into the wafer and extending into the bulk portion of the wafer; and
releasing at least the portion of the wafer having the integrated circuit from a bulk portion of the wafer by etching through the bulk portion of the wafer.

2. The method of claim 1 , in which etching the at least one via comprises etching the at least one via through an area of the wafer occupied by the integrated circuit.

3. The method of claim 1 , further comprising:
depositing a barrier layer on at least portions of the wafer exposed in the at least one via; and
etching the barrier layer from a bottom surface of the at least one via before the releasing step.

4. The method of claim 3 , in which the step of releasing at least the portion of the wafer comprises isotropically etching the wafer from the bottom surface of the at least one via.

5. The method of claim 4 , in which the step of isotropically etching the wafer comprises etching the wafer with xenon difluoride (XeF 2 ).

6. The method of claim 4 , in which the step of isotropically etching the wafer comprises isotropically etching a silicon wafer having a <100> crystal lattice.

7. The method of claim 3 , in which the step of depositing the barrier layer comprises growing a thermal oxide.

8. The method of claim 1 , in which the step of etching the at least one via into the wafer comprises deep reactive ion etching (DRIE).

9. The method of claim 1 , further comprising manufacturing a second integrated circuit on at least a portion of the bulk portion of the wafer.

10. The method of claim 9 , further comprising:
etching at least one via into the second integrated circuit; and
releasing at least the portion of the wafer having the second manufactured integrated circuit.

11. The method of claim 1 , further comprising depositing a protective layer on the wafer before etching the at least one via in the wafer.

12. The method of claim 11 , in which the step of depositing the protective layer comprises depositing at least one of a silicon oxide and a silicon nitride.

13. The method of claim 1 , further comprising packaging the integrated circuit.

14. The method of claim 1 , in which the step of manufacturing the integrated circuit comprises manufacturing at least one of implantable biomedical devices, renewable energy devices, biomimic-robotic devices, and flexible displays.

15. A method, comprising:
manufacturing a first integrated circuit on a wafer, wherein the wafer comprises a bulk portion below the surface of the wafer;
releasing a first thickness of the w afer including the first integrated circuit from the wafer by etching through a bulk portion of the wafer;
manufacturing a second integrated circuit on the water; and
releasing a second thickness of the wafer including the second integrated circuit from the wafer by etching through the bulk portion of the wafer.

16. The method of claim 15 , in which the step of releasing the first thickness of the wafer comprises:
etching at least one via into the wafer;
depositing a barrier layer on exposed surfaces of the at least one via;
removing the barrier layer from a bottom surface of the at least one via; and
isotropically etching the wafer through the bottom surface of the at least one via.

17. The method of claim 15 , further comprising:
manufacturing a third integrated circuit on the wafer; and
packaging the third integrated circuit without releasing the third integrated circuit from the wafer.

18. The method of claim 15 , in which the step of manufacturing the second integrated circuit comprises manufacturing a second integrated circuit different from the first integrated circuit.

19. The method of claim 15 , further comprising packaging the first integrated circuit and the second integrated circuit.

20. The method of claim 15 , in which the step of manufacturing the first integrated circuit comprises manufacturing at least one of implantable biomedical devices, renewable energy devices, biomimic-robotic devices, and flexible displays.

Assignees

• Hussain Muhammad M
• Rojas Jhonathan P
• Univ King Abdullah Sci & Tech

Inventors

• Hussain Muhammad M
• Rojas Jhonathan P

Classifications

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H01L21/78 Primary

  Electricity · mapped topic

• Y02P80/30

  Reducing waste in manufacturing processes; Calculations of released waste quantities · CPC title