Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
Single-crystal manufacturing method and single-crystal manufacturing apparatus
US9200380B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9200380-B2 |
| Application number | US-200913125899-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2009 |
| Priority date | Dec 4, 2008 |
| Publication date | Dec 1, 2015 |
| Grant date | Dec 1, 2015 |
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Abstract
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The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
First claim
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The invention claimed is: 1. A silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a magnetic field consisting essentially of a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field consisting essentially of a horizon…
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Cross-Sectional Technologies · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C30B29/06Primary
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
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Frequently asked questions
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- What does patent US9200380B2 cover?
- The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magn…
- Who is the assignee on this patent?
- Matsumoto Suguru, Sonokawa Susumu, Uesugi Toshiharu, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).