Light-emitting device and method for manufacturing the same

US9196813B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9196813-B2
Application numberUS-201514620425-A
CountryUS
Kind codeB2
Filing dateFeb 12, 2015
Priority dateMar 14, 2013
Publication dateNov 24, 2015
Grant dateNov 24, 2015

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for manufacturing a light-emitting device, comprising the steps of: forming a terminal electrode and a light-emitting element comprising an EL layer over a substrate, wherein a first layer comprising an organic compound contained in the EL layer is provided over the terminal electrode; forming a first substrate having a first opening over the light-emitting element and the terminal electrode with a bonding layer having a second opening interposed…

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What does patent US9196813B2 cover?
A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substr…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H10D86/0214. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).