Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Patent metadata

Field	Value
Publication number	US-9196615-B2
Application number	US-83586507-A
Country	US
Kind code	B2
Filing date	Aug 8, 2007
Priority date	May 9, 2005
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.

First claim

What is claimed is:

1. A nanotube diode comprising:
a cathode layer formed of a semiconductor material; and
an anode layer formed of a patterned nanotube fabric,
wherein the patterned nanotube fabric comprises metallic nanotube elements,
wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor material within the cathode layer,
wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor material forms a Schottky barrier,
wherein the cathode layer and the anode layer are in fixed and direct physical contact, and
wherein the cathode layer and anode layer are constructed and arranged such that sufficient electrical stimulus applied to the cathode layer and the anode layer creates a conductive pathway between the cathode layer and the anode layer.

2. The nanotube diode of claim 1 , wherein the patterned nanotube fabric is a non-woven nanotube fabric comprising a plurality of unaligned nanotubes.

3. The nanotube diode of claim 2 , wherein the non-woven nanotube fabric comprises a layer of nanotubes having a thickness between approximately 0.5 and approximately 20 nanometers.

4. The nanotube diode of claim 2 , wherein the non-woven nanotube fabric comprises a block of nanotubes.

5. The nanotube diode of claim 1 , wherein the cathode comprises an n-type semiconductor material.

6. The nanotube diode of claim 1 , further in electrical communication with a nonvolatile memory cell, the nanotube diode capable of controlling electrical stimulus to the nonvolatile memory cell.

7. The nanotube diode of claim 1 , further in electrical communication with a nonvolatile nanotube switch, the nanotube diode capable of controlling electrical stimulus to the nonvolatile nanotube switch.

8. The nanotube diode of claim 1 , further in electrical communication with an electrical network of switching elements, the nanotube diode capable of controlling electrical stimulus to the electrical network of switching elements.

9. The nanotube diode of claim 1 , further in communication with a storage element, the nanotube diode capable of selecting the storage element in response to electrical stimulus.

10. The nanotube diode of claim 9 , wherein the storage element is nonvolatile.

11. The nanotube diode of claim 1 , further in communication with an integrated circuit,
the nanotube diode operable as a rectifier for the integrated circuit.

12. A nanotube diode comprising:
a conductive terminal;
a semiconductor element disposed over and in electrical communication with the conductive terminal, wherein the semiconductor element forms a cathode layer; and
a nanotube switching element disposed over and in fixed electrical communication with the semiconductor element, wherein the nanotube switching element forms an anode layer,
wherein the nanotube switching element comprises a conductive contact and a patterned nanotube fabric element capable of a plurality of resistance states, and
wherein the patterned nanotube fabric element comprises metallic nanotube elements,
wherein at least a portion of the metallic nanotube elements within the patterned nanotube fabric of the anode layer are in physical and electrical contact with the semiconductor element of the cathode layer,
wherein the physical and electrical contact between metallic nanotube elements within the patterned nanotube fabric and the semiconductor element forms a Schottky barrier,
wherein the cathode layer and the anode layer are constructed and arranged such that in response to sufficient electrical stimuli applied to the conductive contact and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the conductive terminal and the conductive contact.

13. The nanotube diode of claim 12 , wherein the semiconductor element comprises an n-type semiconductor material.

14. The nanotube diode of claim 12 , further in electrical communication with a nonvolatile memory cell, the nanotube diode capable of controlling electrical stimulus to the nonvolatile memory cell.

15. The nanotube diode of claim 12 , further in electrical communication with a nonvolatile nanotube switch, the nanotube diode capable of controlling electrical stimulus to the nonvolatile nanotube switch.

16. The nanotube diode of claim 12 , further in electrical communication with an electrical network of switching elements, the nanotube diode capable of controlling electrical stimulus to the electrical network of switching elements.

17. The nanotube diode of claim 12 , further in communication with a storage element, the nanotube diode capable of selecting the storage element in response to electrical stimulus.

18. The nanotube diode of claim 17 , wherein the storage element is nonvolatile.

19. The nanotube diode of claim 12 , further in communication with an integrated circuit, the nanotube diode operable as a rectifier for the integrated circuit.

Assignees

• Bertin Claude L
• Rueckes Thomas
• Huang X M Henry
• Sivarajan Ramesh
• Ghenciu Eliodor G
• Konsek Steven L
• Meinhold Mitchell
• Nantero Inc

Inventors

• Bertin Claude L
• Rueckes Thomas
• Huang X M Henry
• Sivarajan Ramesh
• Ghenciu Eliodor G
• Konsek Steven L
• Meinhold Mitchell

Classifications

• H10W20/493

  Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title

• H10D88/01

  Manufacture or treatment · CPC title

• H10D88/00

  Three-dimensional [3D] integrated devices · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title