Vertical type semiconductor devices and methods of manufacturing the same
US-2024172441-A1 · May 23, 2024 · US
Vertical tunneling field-effect transistor cell and fabricating the same
US9190484B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9190484-B2 |
| Application number | US-201313745459-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 18, 2013 |
| Priority date | Jan 18, 2013 |
| Publication date | Nov 17, 2015 |
| Grant date | Nov 17, 2015 |
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Abstract
Official abstract text for this publication.
A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. A drain region is disposed over the substrate adjacent to the frustoconical protrusion structure and extends to a bottom portion of the frustoconical protrusion structure as a raised drain region. A gate stack is disposed over the substrate. The gate stack has a planar portion, which is parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the frustoconical protrusion structure, including overlapping with the raised drain region. An isolation dielectric layer is disposed between the planar portion of the gate stack and the drain region. A source region is disposed as a top portion of the frustoconical protrusion structure, including overlapping with a top portion of the gating surface of the gate stack.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a substrate formed of a semiconductor material and having a frustoconical protrusion structure with a first width protruding out of the plane of from a top surface of the substrate, the substrate formed of a semiconductor material; a drain region with a second width disposed within the substrate adjacent to the frustoconical protrusion structure and extending to a bottom portion of the frustoconical protrusion structure,…
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Classifications
Electricity · mapped topic
- H10D30/025Primary
Electricity · mapped topic
- H10D12/021Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D30/63Primary
Electricity · mapped topic
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- What does patent US9190484B2 cover?
- A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. A drain region is disposed over the substrate adjacent to the frustoconical protrusion structure and extends to a bottom portion of the frustoconical protrusion structure as a raised drain region. A gate stack is dispose…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10D30/025. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).